US3694708A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contact arrangement for emitter zone of semiconductor device
Assignee: Siemens AG
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Filing: 1970-11-03
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Granted: 1972-09-26
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Expires: 1990-11-03
Abstract
Abstract The emitter zone of a transistor has a p-n junction which limits the surface thereof and an edge formed by the p-n junction between the emitter and base zones. A contact arrangement comprises contact material provided on only part of the surface area of the emitter zone so that the surface area of the emitter zone in the vicinity of the emitter edge is free of contact material. Insulating material covers the surface area of the emitter zone which is free of contact material. The contact material covers at least part of the insulating material.
Inventors
- 👤 Manfred Arlt
- 👤 Joachim Dathe
- 👤 Helmut Guckel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:38
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
195 words
A contact arrangement for the emitter zone of a transistor having a p-n junction which limits the surface of the emitter zone, the emitter zone having an edge of circular configuration formed by the p-n junction between the emitter and base zones, said contact arrangement comprising contact material provided on only part of the surface area of the emitter zone so that the surface area of the emitter zone in the vicinity of the emitter edge is free of contact material, the part of the surface area provided with contact material being of circular configuration and of annular configurations surrounding the circular part and concentric with the circular part and within the emitter edge, the annular parts being spaced from each other, from the circular part and the emitter edge, the circular part having a radius smaller than the radius of the emitter edge, the annular parts having radial widths which decrease as the distance of the annular part from the center of the circular part increases; and insulating material covering the surface area of the emitter zone which is free of contact material, the contact material covering at least part of the insulating material.
Claim 2
Dependent Claim
195 words
A contact arrangement for the emitter zone of a transistor having a p-n junction which limits the surface of the emitter zone, the emitter zone having an edge of circular configuration formed by the p-n junction between the emitter and base zones, said contact arrangement comprising contact material provided on only part of the surface area of the emitter zone so that the surface area of the emitter zone in the vicinity of the emitter edge is free of contact material, the part of the surface area provided with contact material being of circular configuration and of annular configurations surrounding the circular part and concentric with the circular part and within the emitter edge, the annular parts being spaced from each other, from the circular part and the emitter edge, the circular part having a radius smaller than the radius of the emitter edge, the annular parts having radial widths which decrease as the distance of the annular part from the center of the circular part increases; and insulating material covering the surface area of the emitter zone which is free of contact material, the contact material covering at least part of the insulating material.
Claim 3
Dependent Claim
59 words
A contact arrangement as claimed in claim 1, wherein the insulating material covers the areas of the surface of the emitter zone which are not provided with contact material and the contact material provided for the circular part and the annular parts of the surface area of the emitter zone are part of a unitary body of contact material.
Claim 4
Dependent Claim
48 words
A contact arrangement as claimed in claim 1, wherein the insulating material covers the areas of the surface of the emitter zone between the circular part and the next-adjacent annular part and between the annular parts and the insulating material between said parts is covered with contact material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-26 | 1976-03-27 | 1976-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-26 | 1980-03-27 | 1980-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-26 | 1984-03-27 | 1984-09-26 | $7700.00 | Window Closed / Lapsed |