Method of forming an epitaxial semiconductive layer with a smooth surface
Abstract
Abstract AN EPITAXIAL SEMICONDUCTIVE LAYER A SMOOTH SURFACE IS FORMED ON A SUBSTRATE BY FIRST DEPOSITING THE EPITAXIAL LAYER ON THE SUBSTRATE FROM A FIRST SOLUTION OF THE SEMICONDUCTIVE MATERIAL DISSOLVED IN A MOLTEN METAL SOLVENT AND THEN BRINGING THE EPITAXIAL LAYER HAVING A FILM OF THE FIRST SOLUTION THEREON INTO CONTACT WITH A SECOND SOULTION OF A MOLTEN METAL SOLVENT SATURATED WITH A SEMICONDUCTIVE MATERIAL AND CONTAINING A METAL WHICH INCREASES THE SURFACE COHESION OF THE SOLUTION. THE EPITAXIAL LAYER IS HEALD IN CONTACT WITH THE SECON SOLUTION ONLY LONG ENOUGH TO DISSOLVE THE FILM OF THE FIRST SOLUTION IN THE SECOND SOLUTION. THE SUBSTRATE IS THEN REMOVED FROM THE SECOND SOLUTION WITHOUT RETAINING ANY OF THE SECOND SOLUTION ON THE SURFACE OF THE EPITAXIAL ALYER SO S TO PROVIDE THE EPITAXIAL LAYER WITH A SMOOTH SURFACE.
Inventors
- 👤 Vincent Michael Cannuli
Bibliographic Details
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