Read only memory

Claim 1

In a read only memory, the combination comprising: a. a plurality of storage cells, each said cell being a straight bar of ferrite material, having a predetermined number of address lines coupled thereto, each address line inductively coupled to each storage cell through a fractional turn address winding in a predetermined sense to selected ones of said storage cells while inductively coupled in an opposite sense to all other storage cells in accordance with the information stored in said address line; b. a bias winding inductively coupled in said predetermined sense to all of said storage cells and bias switching means for applying a biasing signal to said bias winding, said bias signal coupled to all of said storage cells to reinforce signals applied by said address lines to said selected ones of said storage cells and to oppose signals applied by said address lines to all other storage cells; c. each storage cell having a multiple turn output winding responsive to a signal on one of said predetermined number of address lines for coupling said signal to said output winding; and d. switching means connected to said address lines for selecting an address line and applying a signal thereto.