US3691406A
Expired / Lapsed
US
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Surface acoustic wave generating system
Assignee: Texas Instruments Inc
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Filing: 1971-08-13
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Granted: 1972-09-12
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Expires: 1991-08-13
Abstract
Abstract In a surface acoustic wave generating system, a portion of a body of semiconductor material is incorporated in structure having electrical capacitance. The capacitive structure is energized to produce mechanical stress in the body of semiconductor material and thereby generate surface acoustic waves on a surface of the body of semiconductor material. In one embodiment of the invention the capacitive structure comprises one or more p-n junctions formed in the body of semiconductor material and intersecting the surface. In another embodiment the capacitive structure comprises one or more MOS capacitors disposed on the body of semiconductor material.
Inventors
- 👤 Jack P Mize
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:44
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/02; H03H9/02535; H03H9/02614; H03H9/02622; H03H9/02543; H03H9/02566; H10; H10D; H10D99/00; H10N; H10N39/00
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
52 words
A method of generating surface acoustic waves on a surface of a body of semiconductor material comprising applying a time varying signal to structure having electrical capacitance to produce mechanical stress in the body of semiconductor material and thereby generate surface acoustic waves on the surface of the body of semiconductor material.
Claim 2
Independent Claim
52 words
A method of generating surface acoustic waves on a surface of a body of semiconductor material comprising applying a time varying signal to structure having electrical capacitance to produce mechanical stress in the body of semiconductor material and thereby generate surface acoustic waves on the surface of the body of semiconductor material.
Claim 3
Dependent Claim
22 words
The method of generating surface acoustic waves according to claim 1 wherein the time varying signal is applied across a p-n junction.
Claim 4
Dependent Claim
28 words
The method of generating surface acoustic waves according to claim 2 wherein the p-n junction is formed in the body of semiconductor material and intersects the surface thereof.
Claim 5
Dependent Claim
44 words
The method of generating surface acoustic waves according to claim 2 further characterized by applying the time varying signal to a plurality of p-n junctions each separated by a distance equal to a predetermined function of the wave length of the surface acoustic waves.
Claim 6
Dependent Claim
29 words
The method of generating surface acoustic waves according to claim 1 wherein the time varying signal is applied to a metal-insulator-semiconductor capacitor disposed on the body of semiconductor material.
Claim 7
Dependent Claim
40 words
The method of generating surface acoustic waves according to claim 1 further characterized by detecting the surface acoustic waves generated on the surface of the body of semiconductor material and producing an output signal corresponding to the surface acoustic waves.
Claim 8
Dependent Claim
24 words
The method of generating surface acoustic waves according to claim 6 further characterized by reapplying the output signal to the structure having electrical capacitance.
Claim 9
Independent Claim
50 words
A method of signal processing which comprises: creating capacitive charge in a portion of a body of semiconductor material to produce mechanical stress in the body of semiconductor material and thereby generate surface acoustic waves on a surface of the body of semiconductor material; and detecting the surface acoustic waves.
Claim 10
Independent Claim
50 words
A method of signal processing which comprises: creating capacitive charge in a portion of a body of semiconductor material to produce mechanical stress in the body of semiconductor material and thereby generate surface acoustic waves on a surface of the body of semiconductor material; and detecting the surface acoustic waves.
Claim 11
Dependent Claim
33 words
The method of claim 8 wherein the capacitive charge is produced in the body of semiconductor material across at least one p-n junction disposed in the surface of the body of semiconductor material.
Claim 12
Dependent Claim
22 words
The method of claim 8 wherein the capacitive charge is applied to a metal-insulator-semiconductor capacitor disposed on the body of semiconductor material.
Claim 13
Dependent Claim
30 words
The method of claim 8 wherein the detecting step is carried out by means of at least one IGFET detector disposed on the surface of the body of semiconductor material.
Claim 14
Independent Claim
77 words
A system for processing surface acoustic waves which comprises: a body of semiconductor material; electrically capacitive means including a portion of the body of semiconductor material; means for energizing the electrically capacitive means to produce mechanical stress in the body of semiconductor material and thereby establish a surface acoustic wave on a surface of the body of semiconductor material; and means mounted on the surface of the body of semiconductor material for detecting the surface acoustic wave.
Claim 15
Independent Claim
77 words
A system for processing surface acoustic waves which comprises: a body of semiconductor material; electrically capacitive means including a portion of the body of semiconductor material; means for energizing the electrically capacitive means to produce mechanical stress in the body of semiconductor material and thereby establish a surface acoustic wave on a surface of the body of semiconductor material; and means mounted on the surface of the body of semiconductor material for detecting the surface acoustic wave.
Claim 16
Dependent Claim
26 words
The surface acoustic wave processing system according to claim 12 wherein the electrically capacitive means includes a p-n junction formed in the body of semiconductor material.
Claim 17
Dependent Claim
52 words
The surface acoustic wave processing system according to claim 13 wherein the electrically capacitive means is further characterized by a plurality of p-n junctions formed in the body of semiconductor material and separated from one another by a distance comprising a predetermined function of the wave length of the surface acoustic wave.
Claim 18
Dependent Claim
43 words
The surface acoustic wave processing system according to claim 12 wherein the electrically capacitive means includes a layer of insulative material formed on a portion of the body of semiconductor material and a layer of metal formed on the layer of insulative material.
Claim 19
Dependent Claim
35 words
The surface acousTic wave processing system according to claim 12 wherein the means for energizing the electrically capacitive means includes means responsive to the surface acoustic wave detecting means for re-energizing the electrically capacitive means.
Claim 20
Dependent Claim
33 words
The surface acoustic wave processing system according to claim 12 wherein the surface acoustic wave detecting means comprises at least one IGFET detector disposed on the surface of the body of semiconductor material.
Claim 21
Dependent Claim
79 words
Apparatus for generating surface acoustic waves which comprises: a body of semiconductor material having p type and n type regions therein which intersect at a junction; and means for back-biasing the junction between the p type and n type regions of the body of semiconductor material with a voltage pulse of predetermined magnitude to produce mechanical stress in the body of semiconductor material and thereby generate a surface acoustic wave on a surface of the body of semiconductor material.
Claim 22
Dependent Claim
79 words
Apparatus for generating surface acoustic waves which comprises: a body of semiconductor material having p type and n type regions therein which intersect at a junction; and means for back-biasing the junction between the p type and n type regions of the body of semiconductor material with a voltage pulse of predetermined magnitude to produce mechanical stress in the body of semiconductor material and thereby generate a surface acoustic wave on a surface of the body of semiconductor material.
Claim 23
Dependent Claim
41 words
The apparatus for generating surface acoustic waves according to claim 18 wherein the junction between the p type and n type regions in the body of semiconductor material extends perpendicularly to and intersects the surface of the body of semiconductor material.
Claim 24
Dependent Claim
26 words
The apparatus for generating surface acoustic waves according to claim 19 wherein one of the regions in the body of semiconductor material is substantially infinitely doped.
Claim 25
Dependent Claim
32 words
The apparatus for generating surface acoustic waves according to claim 20 further characterized by means mounted on the surface of the body of semiconductor material for detecting surface acoustic waves generated thereon.
Claim 26
Dependent Claim
52 words
The apparatus for generating surface acoustic waves according to claim 18 further characterized by a plurality of junctions between p type and n type regions formed in the body of semiconductor material at points separated by a distance equal to a predetermined function of the wave length of the surface acoustic wave.
Claim 27
Dependent Claim
80 words
Apparatus for generating surface acoustic waves comprising: a body of semiconductor material; a layer of insulative material formed on a portion of the body of semiconductor material; a metal layer formed on the insulative layer; and means for establishing a capacitive charge between the metal layer and the body of semiconductor material to produce a mechanical stress in the body of the semiconductor material and thereby generate a surface acoustic wave on a surface of the body of semiconductor material.
Claim 28
Dependent Claim
80 words
Apparatus for generating surface acoustic waves comprising: a body of semiconductor material; a layer of insulative material formed on a portion of the body of semiconductor material; a metal layer formed on the insulative layer; and means for establishing a capacitive charge between the metal layer and the body of semiconductor material to produce a mechanical stress in the body of the semiconductor material and thereby generate a surface acoustic wave on a surface of the body of semiconductor material.
Claim 29
Dependent Claim
33 words
The apparatus for generating surface acoustic waves according to claim 23 further characterized by means mounted on the surface of the body of semiconductor material for detecting the surface acoustic waves generated thereon.
Claim 30
Dependent Claim
29 words
The apparatus for generating surface acoustic waves according to claim 24 further including means responsive to the surface acoustic wave detecting means for re-actuating the capacitive charge establishing means.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |