Method of fabrication of semiconductor devices
Abstract
Abstract IN THE FABRICATION OF CERTAIN TYPES OF SEMICONDUCTOR DEVICES, A SEMICONDUCTOR SUBSTRATE IS PROVIDED WITH SUCCESSIVE LAYERS OF A FIRST LAYER OF TITANIUM, A SECOND LAYER OF A MEMBER OF THE PLATINUM GROUP OF METALS, AND A THIRD LAYER OF TITANIUM, THE LAYERS PREFERABLY BEING PROVIDED IN A PROTETIVE ATMOSPHERE. PORTIONS OF THE UPPERMOST LAYER OF TITANIUM ARE SELECTIVELY ETCHED TO EXPOSED PORTIONS OF THE SECOND LAYER. THE EXPOSED PORTIONS OF THE SECOND LAYER ARE THEN IMMEDIATELY ETCHED AWAY, THE REMAINING PORTIONS OF THE UPPERMOST TITANIUM LAYER SERVING AS AN ETCH MASK IN THE PROCESS. THE PORTIONS OF THE BOTTOM LAYER OF TITANIUM EXPOSED BY THE ETCHING OF THE SECOND LAYER ARE COATED WITH AN ELECTRICALLY NON-CONDUCTIVE COATING, OTHER PORTIONS OF THE SECOND LAYER ARE EXPOSED BY REMOVAL OF THE OVERCOATING OF TITANIUM THEREFROM, AND GOLD IS IMMEDIATELY THEREAFTER PLATED ONTO THE NEWLY EXPOSED SECOND LAYER PORTIONS.
Inventors
- 👤 Joseph Henry Banfield
- 👤 Saleem Ynes Husni
- 👤 William John Greig
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-22 | 1976-02-21 | 1976-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-22 | 1980-02-21 | 1980-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-22 | 1984-02-21 | 1984-08-22 | $7700.00 | Window Closed / Lapsed |