Abstract Small electric resistance elements for temperatures in the range of up to 1,680* C and made of at least 70 percent by volume MoSi2 and up to 30 percent by volume of an addition having grain growth inhibiting properties at high temperatures, the particle size in the body of the finally manufactured element being less than onefifteenth of the cross dimension of the element in the incandescent zone thereof and, in any case, less than 20 microns and further provided with a dense superficial layer of SiO2 glass the thickness of which is between 1 and 8 microns. The incandescent zone suitably has a rectangular cross section having specified dimensions. The grain growth inhibiting addition may suitably be silicon carbide or a glass.
The element of claim 1, characterized in that the incandescent zone has a rectangular cross section having an electrically conDucting area in the range of 0.3 - 4.0 mm2, each side of the rectangle being at least 0.5 mm.
Claim 2
Dependent Claim
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The element of claim 1 in which the grain growth inhibiting addition is silicon carbide.
Claim 3
Dependent Claim
15 words
The element of claim 1 in which the grain growth inhibiting addition is a glass.
Claim 4
Dependent Claim
20 words
The element of claim 1 which has the shape of a wire with a diameter of 0.15 to 1.15 mm.
Claim 5
Dependent Claim
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The element of claim 5, in which the diameter is in the range of 0.35 - 0.85 mm.
Claim 6
Dependent Claim
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The element of claim 5 in which the relation between the length of the wire and its diameter exceeds 200.