US3681132A
Expired / Lapsed
US
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Method of producing a protective layer of sio2 on the surface of a semiconductor wafer
Assignee: Siemens AG
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Filing: 1970-06-25
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Granted: 1972-08-01
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Expires: 1990-06-25
Abstract
Abstract A GAS JET OF SIH4 AND INERT GAS IS PASSED OVER HEATED SEMICONDUCTOR WAFERS ON A SUBSTRATE AND THICKLY COATS THE SUBSTRATE IN THE AREA OF THE WAFERS, SIMULTANEOUSLY CAUSING OXYGEN TO ACT ONT THE WAFERS TO PROVIDE A HOMOGENEOUS LAYER OF SIO2 ON THE WAFERS.
Inventors
- 👤 Erich Pammer
- 👤 Peter Heidegger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S148/00; Y10S148/118; Y10S438/00; Y10S438/935
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-01 | 1976-01-31 | 1976-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-01 | 1980-01-31 | 1980-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-01 | 1984-01-31 | 1984-08-01 | $7700.00 | Window Closed / Lapsed |