US3679948A
Expired / Lapsed
US
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Variable capacitance diode
Assignee: Siemens AG
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Filing: 1969-12-11
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Granted: 1972-07-25
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Expires: 1989-12-11
Abstract
Abstract A semiconductor diode for use as voltage dependent capacitance with p n n or n p p structure. The concentration of the dopant that determines the conductance type of the middle n or p region decreases monotonously at least in one component region of said zone, as its distance from the p-n junction increases. The outer p or n region is so strongly doped that the space charge region of the p-n junction extends at least predominantly into the n n or p p region. The coating of the n n or p p regions is so adjusted that its concentration N(x), in dependence on the distance x from the p-n junction of the diode, meets everywhere the Equation N(x) > -x/3 dN/dx.
Inventors
- 👤 Wolfgang Wenzig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:46
CPC Classifications
H; H03; H03J; H03J3/00; H03J3/28; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10P; H10P95/00; Y; Y02; Y02T; Y02T50/00; Y02T50/10
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
152 words
Semiconductor diode to be used as a voltage dependent capacitance, whose semiconductor crystal has a p-n junction and three zones (p+n+ n or n+p+p) with variable conductivity wherein a first zone, having the strongest doping concentration of the three zones of one conductance type (p+ or n+) and a weaker doped second zone of opposite conductance type (n+ or p+) are adjacent each other in the p-n junction, while a third zone (p or n) which is doped even less than the second zone and has the conductance type of the second zone, does not participate in bordering the pn junction whereby the dopant concentration N in the second zone which borders the p-n junction, decreases monotonously at a growing distance x from the p-n junction and conforms with equation N (x)>-x/3 dN/dx and the space charge zone in the p-n junction extends predominantly into the second zone of the semiconductor crystal.
Claim 2
Dependent Claim
152 words
Semiconductor diode to be used as a voltage dependent capacitance, whose semiconductor crystal has a p-n junction and three zones (p+n+ n or n+p+p) with variable conductivity wherein a first zone, having the strongest doping concentration of the three zones of one conductance type (p+ or n+) and a weaker doped second zone of opposite conductance type (n+ or p+) are adjacent each other in the p-n junction, while a third zone (p or n) which is doped even less than the second zone and has the conductance type of the second zone, does not participate in bordering the pn junction whereby the dopant concentration N in the second zone which borders the p-n junction, decreases monotonously at a growing distance x from the p-n junction and conforms with equation N (x)>-x/3 dN/dx and the space charge zone in the p-n junction extends predominantly into the second zone of the semiconductor crystal.
Claim 3
Dependent Claim
60 words
A semiconductor diode according to claim 1, wherein the p-n junction is produced through a diffusion of two oppositely acting dopants into an original crystal of one conductance type and the concentration Nj of the middle region at the p-n junction, as well as the concentration NB of the original crystal, satisfies the Equation NB/Nj > 6.11 . 10 3.
Claim 4
Dependent Claim
159 words
Electrical oscillating circuit device with a semiconductor diode as a tunable capacitance wherein the semiconductor body of the semiconductor diode has a p-n junction and three zones of variable conductivity where a first zone of the one conductance type, p+ or n+, has the strongest dopant concentration of the three zones and a somewhat weaker doped second zone of opposite conductance type (n+ or p+) are adjacent in the p-n junction while a third zone (p or n) which is doped even weaker than the second zone and has the conductance type of the second zone does not participate in limiting the p-n junction, and further the doping concentration N in the second zone which limits the p-n junction decreases monotonously, at a growing distance x, from the p-n junction and complies all over with the relation N (x)>-x/3 dN/dx and the space change zone in the p-n junction extends predominantly into the second zone of the semiconductor crystal.
Claim 5
Dependent Claim
159 words
Electrical oscillating circuit device with a semiconductor diode as a tunable capacitance wherein the semiconductor body of the semiconductor diode has a p-n junction and three zones of variable conductivity where a first zone of the one conductance type, p+ or n+, has the strongest dopant concentration of the three zones and a somewhat weaker doped second zone of opposite conductance type (n+ or p+) are adjacent in the p-n junction while a third zone (p or n) which is doped even weaker than the second zone and has the conductance type of the second zone does not participate in limiting the p-n junction, and further the doping concentration N in the second zone which limits the p-n junction decreases monotonously, at a growing distance x, from the p-n junction and complies all over with the relation N (x)>-x/3 dN/dx and the space change zone in the p-n junction extends predominantly into the second zone of the semiconductor crystal.
References Cited (Backward Citations)
US3335337A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-25 | 1976-01-24 | 1976-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-25 | 1980-01-24 | 1980-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-25 | 1984-01-24 | 1984-07-25 | $7700.00 | Window Closed / Lapsed |