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US3679942A
Expired / Lapsed
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Metal-oxide-metal, thin-film capacitors and method of making same
Assignee: RCA Corp
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Filing: 1971-02-09
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Granted: 1972-07-25
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Expires: 1991-02-09
Abstract
Abstract In the manufacture of a metal-oxide-metal (MOM) thin-film capacitor, the layer of dielectric material, such as silicon dioxide, is deposited, by thermal decomposition of a silicon compound, over a conductive ground plate; and the Q factor (or quality factor) of the capacitor is enhanced and the dissipation factor of the silicon dioxide is reduced by low-temperature densification of the silicon dioxide.
Inventors
- 👤 Francis Patrick Daly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:04
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
21 words
The high-Q, metal-oxide-metal capacitor according to claim 1, wherein said silicon dioxide layer has a dielectric constant of less than 4.5.
Claim 2
Dependent Claim
28 words
The high-Q, metal-oxide-metal capacitor according to claim 1, wherein said conductive material forming the electrode regions is selected from the group consisting of aluminum, tungsten, chrome-gold-chrome, and chrome-copper-chrome.
Claim 3
Independent Claim
103 words
A method of making metal-oxide-metal, thin-film capacitors on a surface of an insulating substrate comprising the steps of: depositing a first electrode on said surface; forming a silicon dioxide layer on a portion of said first electrode; densifying said silicon dioxide layer by exposing said substrate, said electrode, and said silicon dioxide layer to a relatively inert, wet gaseous atmosphere while holding said substrate, said electrode, ad said silicon dioxide layer at a surface temperature of from 395* to 425* C. for a period of at least six hours; and, depositing a second electrode on said silicon dioxide layer to form said capacitor.
Claim 4
Dependent Claim
32 words
A method of making metal-oxide-metal, thin-film capacitors as defined in claim 4, wherein said conductive material forming the electrode region is selected from the group consisting of aluminum, tungsten, chrome-gold-chrome, and chrome-copper-chrome.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-25 | 1976-01-24 | 1976-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-25 | 1980-01-24 | 1980-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-25 | 1984-01-24 | 1984-07-25 | $7700.00 | Window Closed / Lapsed |