Method for fabricating multilayer magnetic devices

Abstract

Abstract METHOD FOR FABRICATING MULTILAYER MAGNETOSTATICALLYCOUPLED THIN-FILM MAGNETIC MEMORY DEVICES. A PLURALITY OF LAYERS ARE DEPOSITED IN SUCCESSION ON A GLASS OR QUARTZ SUBSTRATE. THE LAYERS INCLUDE A FIRST PERMALLOY MAGNETIC FILM, A CHROMIUM BARRIER LAYER, A CHROMIUM-COPPER ALLOY SECOND PERMALLOY MAGNETIC FILM, A SILICON MONOXIDE PROTECTIVE LAYERS, A CHROMIUM MASKING LAYER, AND A PHOTOSENSITIVE RESISTANT MATERIAL MASKING LAYER. OPENINGS DELINEATING THE BOUNDARIES OF THE DESIRED MAGNETIC MEMORY DEVICES ARE THEN FORMED IN THE MASKING LAYER OF PHOTOSENSITIVE RESISTANT MATERIAL. SELECTIVE ETCHING MATERIALS ARE THEN USED, IN FOUR SUCCESSIVE ETCHING OPERATIONS, TO INITIALLY FORM AN OPENING IN THE CHROMIUM MASKING LAYER (FIRST ETCHING OPERATION), FOLLOWED BY OPENINGS IN THE SILICON MONOXIDE PROTECTIVE LAYER, THE SECOND PERMALLOY MAGNETIC FILM, THE SILICON MONOXIDE SMOOTHING LAYER, AND THE CHROMIUM-COPPER ALLOY CONDUCTING LAYER (SECOND ETCHING OPERATION), AN OPENING IN THE CHROMIUM BARRIER LAYER (THIRD ETCHING OPERATION), AND AN OPENING IN THE FIRST PERMALLOY MAGNETIC FILM (FOURTH ETCHING OPERATION).

Inventors

• 👤 Stefan E Reiss

Bibliographic Details