US3676741A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor target structure for image converting device comprising an array of silver contacts having discontinuous nodular structure
Assignee: AT&T Inc
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Filing: 1970-12-09
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Granted: 1972-07-11
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Expires: 1990-12-09
Abstract
Abstract Conductive metal islands are applied over each diode region and the adjacent oxide to minimize adverse charge build up on the insulating layer of the target surface of a semiconductor diode array target structure. These conductive metal islands are made by the plating of silver from a silver nitrate and hydrofluoride bath. The process produces a deposited silver button having an irregular, somewhat nodular, configuration.
Inventors
- 👤 Steve Michael Forst
- 👤 Horst Alfred Reinheimer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J9/00; H01J9/20; H01J9/233; H10D; H10D99/00; H10P; H10P14/00; H10P14/40; H10P14/46; H10P14/47; Y; Y10; Y10S; Y10S257/00; Y10S257/917
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
100 words
A target structure for an electron beam storage device comprising a semiconductive wafer the major portion of which is of a first conductivity type; the semiconductor wafer including on a first surface thereof an array of regions, each of the regions defining with the major portion of the wafer a PN junction; an array of metal contacts each of which is bonded to one of the regions of the second conductivity type; characterized in that said metal contacts are comprised of a discontinuous, nodular coating of silver produced by displacement plating from a silver nitrate and buffered hydrofluoric acid bath.
Claim 2
Dependent Claim
100 words
A target structure for an electron beam storage device comprising a semiconductive wafer the major portion of which is of a first conductivity type; the semiconductor wafer including on a first surface thereof an array of regions, each of the regions defining with the major portion of the wafer a PN junction; an array of metal contacts each of which is bonded to one of the regions of the second conductivity type; characterized in that said metal contacts are comprised of a discontinuous, nodular coating of silver produced by displacement plating from a silver nitrate and buffered hydrofluoric acid bath.
Claim 3
Dependent Claim
24 words
A target structure in accordance with claim 1 in which the array of regionS on said first surface is defined by an insulating layer.
Claim 4
Dependent Claim
24 words
A target structure in accordance with claim 2 in which said metal contacts include a peripheral portion overlying said insulating film defining said regions.
Claim 5
Dependent Claim
38 words
A target structure in accordance with claim 3 in which said overlying portion of said metal contacts is of greater thickness than the remaining portion of said metal contacts and said overlying portion is of a nodular configuration.
References Cited (Backward Citations)
US2392429A
Cited
US3204158A
Cited
FR1361875A
Cited
US3403284A
Cited
US3457475A
Cited
US3496631A
Cited
US3497774A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-11 | 1976-01-10 | 1976-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-11 | 1980-01-10 | 1980-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-11 | 1984-01-10 | 1984-07-11 | $7700.00 | Window Closed / Lapsed |