Patent US4957496A successfully refreshed from Google Patents.
US3676714A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: US Philips Corp
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Filing: 1970-04-01
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Granted: 1972-07-11
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Expires: 1990-04-01
Abstract
Abstract A p-n junction isolated integrated circuit bipolar transistor with means to prevent parasitic transistor action between the base of the transistor and the substrate due to accidental forward bias of the base-collector junction. Said means include an auxilliary region disposed in the collector region to collect minority carriers injected into the collector from the base during forward bias. Feedback means connected to the auxilliary region remove the forward bias voltage.
Inventors
- 👤 Bernardus Leonardus Wensink
- 👤 Adriaan Cense
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 19:28
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/615; H10D84/63
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
240 words
A semiconductor device comprising a semiconductor body having a substantially flat surface covered at least partly with an insulating layer, a substrate region of a first conductivity type adjoining said surface, an island-shaped collector region of a second conductivity type adjoining said surface and nested within the substrate region forming therewith an isolating p-n junction, a first base zone of the first conductivity type adjoining the surface and nested within the collector region, a second zone of the first conductivity type adjoining the surface and nested within the collector region and located adjacent but spaced from the first zone and substantially entirely surrounding the first zone, a third emitter zone of the second conductivity type nested within the firsT base zone, an emitter contact to the emitter zone, a base contact to the base zone, a collector contact to the collector region, a contact which is separate from the collector contact to the second zone, a connection to the substrate region, means for applying to the contacts and connection potentials such that the isolating junction is reverse biased, the emitter-base junction is forward biased and the base-collector junction is normally reverse biased but at least temporarily becomes forward biased causing undesirable injection of carriers into the collector region, an impedance coupled to the second zone contact for developing a voltage upon collection of said undesirable injected carriers, and means for feeding back said voltage to prevent the undesirable carrier injection.
Claim 2
Dependent Claim
240 words
A semiconductor device comprising a semiconductor body having a substantially flat surface covered at least partly with an insulating layer, a substrate region of a first conductivity type adjoining said surface, an island-shaped collector region of a second conductivity type adjoining said surface and nested within the substrate region forming therewith an isolating p-n junction, a first base zone of the first conductivity type adjoining the surface and nested within the collector region, a second zone of the first conductivity type adjoining the surface and nested within the collector region and located adjacent but spaced from the first zone and substantially entirely surrounding the first zone, a third emitter zone of the second conductivity type nested within the firsT base zone, an emitter contact to the emitter zone, a base contact to the base zone, a collector contact to the collector region, a contact which is separate from the collector contact to the second zone, a connection to the substrate region, means for applying to the contacts and connection potentials such that the isolating junction is reverse biased, the emitter-base junction is forward biased and the base-collector junction is normally reverse biased but at least temporarily becomes forward biased causing undesirable injection of carriers into the collector region, an impedance coupled to the second zone contact for developing a voltage upon collection of said undesirable injected carriers, and means for feeding back said voltage to prevent the undesirable carrier injection.
Claim 3
Dependent Claim
37 words
A semiconductor device as set forth in claim 1 wherein the temporary forward biasing occurs when the transistor formed by the emitter, base and collector zones bottoms, and the feedback means is connected to prevent transistor bottoming.
Claim 4
Dependent Claim
60 words
A semiconductor device as set forth in claim 1 wherein the spacing of the first zone to the second zone measured parallel to the surface is larger than the width of the depletion layer which in the operating condition extends between the first and second zones but is smaller than the diffusion length for minority carriers in the collector region.
Claim 5
Dependent Claim
32 words
A semiconductor device as set forth in claim 3 wherein a buried layer of the second conductivity type and of a higher conductivity than the collector zone extends below the base zone.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-11 | 1976-01-10 | 1976-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-11 | 1980-01-10 | 1980-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-11 | 1984-01-10 | 1984-07-11 | $7700.00 | Window Closed / Lapsed |