US3676231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing high performance semiconductor device
Assignee: International Business Machines Corp
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Filing: 1970-02-20
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Granted: 1972-07-11
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Expires: 1990-02-20
Abstract
Abstract A METHOD FOR PRODUCING A DIFFUSED BORON REGION IN A SILICON SEMICONDUCTOR HAVING AN IMPURITY PROFILE CHARACTERIZED AS A STEP FUNCTION AND HAVING A SURFACE IMPURITY CONCENTRATION LESS THAN THE SOLID SOLUBILITY OF BORON IN SILICON WHEREIN THE BODY IS EXPOSED TO A GASEOUS MIXTURE OF O2, AND BBR3, AND AN INERT CARRIER GAS AT AN ELEVATED TEMPERATURE WHICH FORMS A GLASSY BORON RICH LAYER, AND SUBSEQUENTLY HEATING THE RESULTANT BODY IN AN OXIDIZING ENVIROMENT, OR A COMBINATION OXIDIZING AND NONOXIDIZING ENVIROMENTS, TO INCREASE THE DEPTH OF THE DIFFUSED REGION AND SIMULTANEOUSLY REDUCE THE SURFACE CONCENTRATION PRODUCING A PROFILE HAVING A STEP FUNCTION CONFIGURATION.
Inventors
- 👤 Bartholomew P Medvecky
- 👤 Avtar S Oberai
- 👤 Alan Platt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:04
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/14; H10P32/1404; H10P95/00
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-11 | 1976-01-10 | 1976-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-11 | 1980-01-10 | 1980-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-11 | 1984-01-10 | 1984-07-11 | $7700.00 | Window Closed / Lapsed |