US3671821A
Expired / Lapsed
US
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Semiconductor controlled rectifier including two emitter regions
Assignee: Mitsubishi Electric Corp
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Filing: 1971-05-28
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Granted: 1972-06-20
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Expires: 1991-05-28
Abstract
Abstract A semiconductor controlled rectifier is provided on its main surface having a gate electrode with first and second emitter layers separated from one another by a common base layer. The second emitter layer is disposed between the first emitter layer and the gate electrode. The device further comprises a high impurity concentration semiconductor layer of the opposite semiconductivity type to that of the second emitter layer. The high impurity concentration layer is disposed between the first and second emitter layers and adjacent to the second emitter layer.
Inventors
- 👤 Josuke Nakata
- 👤 Ryuji Denda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:22
CPC Classifications
H; H10; H10D; H10D99/00; H10D18/00; H10P; H10P95/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
132 words
A semiconductor controlled rectifier comprising a semiconductor wafer including a base layer of one semiconductivity type, a layer of the other semiconductivity type and a layer of said one semiconductivity type, said layer of the other conductivity type being between and forming a pn-junction with each of said layers of said one conductivity type, a control electrode disposed on said base layer of said semiconductor wafer, a first emitter layer of said other semiconductivity type forming a pn-junction with said base layer, a second emitter layer of said other semiconductivity type between saiD control electrode and said first emitter layer and forming a pn-junction with said base layer, and a layer of said one semiconductivity type between said first and second emitter layers and forming a pn-junction with said second emitter layer.
Claim 2
Dependent Claim
132 words
A semiconductor controlled rectifier comprising a semiconductor wafer including a base layer of one semiconductivity type, a layer of the other semiconductivity type and a layer of said one semiconductivity type, said layer of the other conductivity type being between and forming a pn-junction with each of said layers of said one conductivity type, a control electrode disposed on said base layer of said semiconductor wafer, a first emitter layer of said other semiconductivity type forming a pn-junction with said base layer, a second emitter layer of said other semiconductivity type between saiD control electrode and said first emitter layer and forming a pn-junction with said base layer, and a layer of said one semiconductivity type between said first and second emitter layers and forming a pn-junction with said second emitter layer.
Claim 3
Dependent Claim
44 words
A semiconductor controlled rectifier as claimed in claim 1, wherein said layer of said one semiconductivity type between said first and second emitter layers and forming a pn-junction with said second emitter layer has an impurity concentration higher than that of said base layer.
Claim 4
Dependent Claim
46 words
A semiconductor controlled rectifier as claimed in claim 2, wherein said layer of said one semiconductivity type between said first and second emitter layers and forming a pn-junction with said second emitter layer has a surface impurity concentration equal to at least 5 X 1019 atom/cm3.
Claim 5
Dependent Claim
46 words
A semiconductor controlled rectifier as claimed in claim 1, wherein a section including said layer of said one semiconductivity type formed between said first and second emitter layers and forming a pn-junction with said second emitter layer and said second emitter layer have gold diffused therein.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-20 | 1975-12-20 | 1976-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-20 | 1979-12-20 | 1980-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-20 | 1983-12-20 | 1984-06-20 | $7700.00 | Window Closed / Lapsed |