Patent DE963585C successfully refreshed from Google Patents.
US3671340A
Expired / Lapsed
US
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Transistor device with plateau emitter and method for making the same
Assignee: NEC Corp
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Filing: 1970-02-06
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Granted: 1972-06-20
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Expires: 1990-02-06
Abstract
Abstract A SEMICONDUCTOR DEVICE AND A METHOD FOR MAKING THE SAME, IN WHICH DIFFUSION OF IMPURITIES FORMING THE COLLECTOR AND EMITTER AREAS OF THE DEVICE ARE CONFINED TO RAISED PORTIONS OF THE SUBSTRATE. UNDESIRED LATERAL DIFFUSION OF THE IMPURITIES IS THUS ELIMINATED.
Inventors
- 👤 Toshiaki Irie
- 👤 Katsuo Sato
- 👤 Yoshiyuki Nanko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:13
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/117; Y10S148/145; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-20 | 1975-12-20 | 1976-06-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-20 | 1979-12-20 | 1980-06-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-20 | 1983-12-20 | 1984-06-20 | $7700.00 | Window Closed / Lapsed |