US3670218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic heteroepitaxial microwave tunnel die
Assignee: Boeing North American Inc
•
Filing: 1971-08-02
•
Granted: 1972-06-13
•
Expires: 1991-08-02
Abstract
Abstract A monolithic heteroepitaxial microwave tunnel diode with a vertical tunnel junction is manufactured from an insulating substrate on which a layer of p-type semiconductor material has been grown. A layer of dielectric thin film is placed over the ptype semiconductor layer and where an ohmic contact is desired an opening is formed in the dielectric thin film. A circuit metal is then alloyed to the p-type semiconductor material. A similar opening is formed where a tunnel junction is desired and a second metal is alloyed to the p-type semiconductor material. An n-type semiconductor region is formed during the second alloying.
Inventors
- 👤 Rudolf R August
- 👤 Richard L Palmquist
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:33
CPC Classifications
H; H10; H10D; H10D99/00; H10D8/00; H10D8/70; H10D84/00; H10D84/60; H10D84/645; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
28 words
The device of claim 1 comprising in addition a metal ground plane intimate to said dielectric substrate but not in contact with any other metal or semiconductor material.
Claim 2
Dependent Claim
54 words
The device of claim 1 wherein there is an interchange of the p and n-type materials and a layer of n-type semiconductor material is epitaxially deposited on said dielectric substrate instead of said p-type material and a p-type region is grown at the interface of said n-type semiconductor material to form said p-n junction.
Claim 3
Dependent Claim
22 words
The device of claim 1 wherein said dielectric substrate is selected from a group consisting of aluminum oxide, beryllium oxide and sapphire.
Claim 4
Dependent Claim
13 words
The device of claim 1 wherein said p-type semiconductor is degenerate gallium arsenide.
Claim 5
Dependent Claim
14 words
The device of claim 5 wherein said degenerate gallium arsenide is doped with zinc.
Claim 6
Dependent Claim
20 words
The device of claim 6 wherein said degenerate gallium arsenide is doped to an acceptor concentration of 2 X 1019/cm3.
Claim 7
Dependent Claim
21 words
The device of claim 1 wherein said first metal is selected from a group consisting of zinc, silver, cadmium and indium.
Claim 8
Dependent Claim
19 words
The device of claim 1 wherein said layer of p-type semiconductor has a thickness between 1 and 25 microns.
Claim 9
Dependent Claim
21 words
The device of claim 1 wherein said second metal used for producing the p-n junction consists of sulfur mixed with tin.
Claim 10
Dependent Claim
19 words
The device of claim 10 wherein the amount of tin is mixed with the maximum soluble amount of sulfur.
Claim 11
Dependent Claim
18 words
The device of claim 1 wherein said dielectric thin film is made from silicon oxide and silicon nitride.
Claim 12
Dependent Claim
29 words
The device of claim 1 wherein the alloying into of said first metal used for producing the ohmic contact zone is effected at a temperature of about 300* C.
Claim 13
Dependent Claim
30 words
The device of claim 1 wherein the alloying into of said second metal used for the production of the p-n junction is effected at temperatures between 380* and 500* C.
Claim 14
Dependent Claim
25 words
The device of claim 1 wherein the alloying into of said second metal used for producing the p-n junction is effected in a reducing atmosphere.
References Cited (Backward Citations)
US2972092A
Cited
US3065391A
Cited
US3408732A
Cited
US3375416A
Cited
US3184659A
Cited
US3391346A
Cited
US3375145A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-13 | 1975-12-13 | 1976-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-13 | 1979-12-13 | 1980-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-13 | 1983-12-13 | 1984-06-13 | $7700.00 | Window Closed / Lapsed |