Method of producing semiconductor devices
Abstract
Abstract IN MANUFACTURING SILICON MESA DIODES, THE METHOD OF FORMING METAL CONTACTS ON THE UPPER SURFACES OF THE MESAS BY APPLYING A LAYER OF CONDUCTIVE MATERIAL OVER THE ENTIRE SURFACE OF THE WAFER INCLUDING THE UPPER SURFACES OF THE MESAS AND THE SILICON OXIDE COATING ON THE REMAINDER OF THE WAFER. THE WAFER IS POSITIONED WITH THE MESAS DOWNWARD AND PLACED IN CONTACT WITH A THIN LAYER OF AN UNCURED EPOXY RESIN SO AS TO CAUSE RESIN TO ADHERE ONLY ON THE CONDUCTIVE MATERIAL OVERLYING THE UPPER SURFACES OF THE MESAS. AFTER CURING THE RESIN, THE WAFER IS SUBJECTED TO AN ETCHING SOLUTION TO DISSOLVE THE CONDUCTIVE MATERIAL EXCEPT THE CONTACTS OF THE UPPER SURFACES OF THE MESAS WHICH ARE PROTECTED BY THE CURED EPOXY RESIN.
Inventors
- 👤 Clifford A Levi
Bibliographic Details
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1975-06-13 | 1975-12-13 | 1976-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-13 | 1979-12-13 | 1980-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-13 | 1983-12-13 | 1984-06-13 | $7700.00 | Window Closed / Lapsed |