US3668481A
Expired / Lapsed
US
⏱️ 0.0 years remaining
A hot carrier pn-diode
Assignee: Motorola Solutions Inc
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Filing: 1970-08-10
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Granted: 1972-06-06
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Expires: 1990-08-10
Abstract
Abstract Disclosed is a Schottky barrier or hot carrier diode and process for making same wherein a diffused PN junction and a Schottky barrier junction are both formed in a body of semiconductor material. The diffused PN junction is formed by first diffusing an impurity through an opening in a diffusion mask and into one surface of the semiconductor body to form PN junction. Next, a large central portion of the region formed by the above diffusion is removed by etching or cutting, leaving unaffected by the etchant only that portion of the diffused region underlying and adjacent to the diffusion mask on the surface of the semiconductor body. The latter portion of the diffused region forms a relatively small area diffused PN junction. Finally, a Schottky barrier junction is formed in the etched out area of the semiconductor body, and the diode including the diffused and Schottky barrier junctions has a near-ideal current-voltage characteristic and still maintains its fast recovery time.
Inventors
- 👤 Jack L Saltich
- 👤 James L Rutledge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:11
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; H10D1/00; H10D1/40; H10D48/00; H10D48/30; H10D48/38; H10D62/00; H10D62/10; H10D99/00; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/051
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
142 words
A hot carrier Schottky barrier diode comprising: a semiconductor body of one type conductivity and having an upper surface; a passivating layer adherent to said upper surface and having an aperture formed therein; a cavity in said body being exposed by said aperture; an annular shaped region of opposite conductivity type formed in said body and encircling said cavity; said region forming a PN junction with said body and having a first edge terminating at said upper surface and under said layer, and having a second edge terminating at the wall of said cavity; a first contact member positioned in said cavity and extending up the walls of the cavity and overlying a portion of said passivating layer, said contact member forming a rectifying contact with said body for forming a Schottky barrier junction therewith and an ohmic contact with said region.
Claim 2
Dependent Claim
142 words
A hot carrier Schottky barrier diode comprising: a semiconductor body of one type conductivity and having an upper surface; a passivating layer adherent to said upper surface and having an aperture formed therein; a cavity in said body being exposed by said aperture; an annular shaped region of opposite conductivity type formed in said body and encircling said cavity; said region forming a PN junction with said body and having a first edge terminating at said upper surface and under said layer, and having a second edge terminating at the wall of said cavity; a first contact member positioned in said cavity and extending up the walls of the cavity and overlying a portion of said passivating layer, said contact member forming a rectifying contact with said body for forming a Schottky barrier junction therewith and an ohmic contact with said region.
Claim 3
Dependent Claim
46 words
The diode defined in claim 1 wherein said first contact member being formed by material selected from the group consisting of aluminum, gold, silver and platinum silicide for providing a relatively high Schottky barrier height and a relatively low leakage current through said Schottky barrier junction.
Claim 4
Dependent Claim
43 words
The diode defined in claim 1 wherein said first contact member being formed by material selected from the group consisting of titanium, molybdenum, chromium and nickel for providing a relatively low Schottky barrier height and relatively high reverse leakage and high forward currents.
Claim 5
Dependent Claim
47 words
The diode defined in claim 2 which further includes a second contact member adherent to said first contact member for providing good bonding contact to said diode, said second contact member being formed by material selected from the group consisting of gold, aluminum, platinum and copper alloys.
Claim 6
Dependent Claim
47 words
The diode defined in claim 3 which further includes a second contact member adherent to said first contact member for providing good bonding contact for said diode, said second contact member being formed by material selected from the group consisting of gold, aluminum, platinum and copper alloys.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-06 | 1975-12-06 | 1976-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-06 | 1979-12-06 | 1980-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-06 | 1983-12-06 | 1984-06-06 | $7700.00 | Window Closed / Lapsed |