Method for alloying metals in the presence of reactive materials
Abstract
Abstract THE INVENTION INVOLVES A PROCESS FOR ALLOYING A METAL SUCH AS ALUMINUM INTO A SEMICONDUCTOR SUCH AS GERMANIUM IN THE PRESENCE OF REACTIVE INSULATING MATERIAL SUCH AS SILICON DIOXIDE. A LAYER OF AN ORGANIC MATERIAL IS DEPOSITED ON THE SURFACE OF THE INSULATING MATERIAL PRIOR TO ALLOYING AND HEATED FOR A TIME AND TEMPERATURE SUFFICIENT TO LEAVE A RESIDUE OF THE ORGANIC MATERIAL AT THE SURFACE OF THE INSULATING MATERIAL. THE ORGANIC MATERIAL IS REMOVED BY SPRAYING WITH AN ORGANIC SOLVENT SUCH AS TRICHLORO-ETHYLENE WHILE THE MATERIALS ARE STILL HOT. ALLOYING OF THE METAL WITH THE SEMICONDUCTOR IS THEN CARRIED OUT AND ANY REACTION BETWEEN THE ALUMINUM AND THE SILICON DIOXIDE WHICH MIGHT BE EXPECTED TO OCCUR IS MINIMIZED.
Inventors
- 👤 Joseph M Blum
- 👤 Jan P Hoekstra
Bibliographic Details
Claims Analysis
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