Abstract A Schottky surface barrier junction diode in which a metal layer is provided over a surface of a body of semiconductor material. The metal layer has a first portion which is in contact with the surface of the body to form the Schottky surface barrier junction, and a second portion which is spaced from the surface of the body. A bonding layer is provided between the second portion of the metal layer and the surface of the body and mechanically secures the metal layer to the body. A terminal lead is in contact with the metal layer and is bonded only to the second portion of the metal layer so that the terminal lead is mechanically secured to the body without disrupting the Schottky surface barrier junction.
A semiconductor diode comprising: a. a body of semiconductor material, b. a metal layer on said body, a first portion of said metal layer contacting a surface of said body and forming a surface barrier rectifying juncTion with said body, c. a bonding layer between a second portion of said metal layer and said body, said bonding layer mechanically securing said metal layer to said body, and d. a metal terminal lead engaging said metal layer and bonded only to said second portion of the metal layer.
Claim 2
Dependent Claim
87 words
A semiconductor diode comprising: a. a body of semiconductor material, b. a metal layer on said body, a first portion of said metal layer contacting a surface of said body and forming a surface barrier rectifying juncTion with said body, c. a bonding layer between a second portion of said metal layer and said body, said bonding layer mechanically securing said metal layer to said body, and d. a metal terminal lead engaging said metal layer and bonded only to said second portion of the metal layer.
Claim 3
Dependent Claim
84 words
A semiconductor diode in accordance with claim 1 including a layer of an electrical insulating material on said surface of the body, said insulating layer having an opening therethrough to said surface of the body, the first portion of the metal layer contacting the surface of the body in the opening in the insulating layer, the second portion of the metal layer extending over the insulating layer, and the bonding layer being between the second portion of the metal layer and the insulating layer.
Claim 4
Dependent Claim
19 words
A semiconductor diode in accordance with claim 2 in which the bonding layer comprises at least one metal film.
Claim 5
Dependent Claim
75 words
A semiconductor diode in accordance with claim 3 in which the bonding layer comprises a pair of superimposed metal films, one of said metal films contacting and having good adherence to the insulating layer and the other of said metal films contacting and having good adherence to the insulating layer and the other of said metal films contacting and having good adherence to both the one metal film and the second of the metal layer.