US3665218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Control circuit for insulated gate field effect transistors
Assignee: AT&T Inc
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Filing: 1970-10-30
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Granted: 1972-05-23
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Expires: 1990-10-30
Abstract
Abstract The gate voltage of an insulated gate switching transistor is controlled by means of a pair of reverse biased Schottky barrier diodes connected in mutual series aiding electrical relationship. A common node or terminal between these diodes is connected to the gate of the transistor and to an electrical switch, in order to provide means for varying the total electrical impedance across one or the other of the diodes, and thereby to turn the transistor between the ''''ON'''' and ''''OFF'''' states thereof.
Inventors
- 👤 John Marshall Andrews Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:06
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/16; H03K17/161; H03K17/162; H03K17/94; H03K17/945
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
124 words
An electrical network which comprises: a. a switching transistor having an insulated gate electrode; b. a pair of Schottky barrier diodes connected in a mutual series-aiding electrical relationship, adapted for the application of a reverse voltage bias to both diodes of the pair; c. a common node between the diodes to whch the gate electrode is also connected; and d. means for varying the electrical impedance across one of the diodes, in order to vary the electrical current passing through the transistor to an electrical load, the impedance ration of the diodes being such that the voltage at the common node is below the threshold gate voltage when said means is in a first impedance condition, and said reverse bias being a D.C. voltage.
Claim 2
Dependent Claim
124 words
An electrical network which comprises: a. a switching transistor having an insulated gate electrode; b. a pair of Schottky barrier diodes connected in a mutual series-aiding electrical relationship, adapted for the application of a reverse voltage bias to both diodes of the pair; c. a common node between the diodes to whch the gate electrode is also connected; and d. means for varying the electrical impedance across one of the diodes, in order to vary the electrical current passing through the transistor to an electrical load, the impedance ration of the diodes being such that the voltage at the common node is below the threshold gate voltage when said means is in a first impedance condition, and said reverse bias being a D.C. voltage.
Claim 3
Dependent Claim
18 words
The electrical network recited in claim 1 in which the transistor is an insulated gate field effect transistor.
Claim 4
Dependent Claim
17 words
The electrical network recited in claim 1 in which the said means include a mechanically operated switch.
Claim 5
Dependent Claim
86 words
An electrical network which comprises: a. a switching transistor having an insulated gate electrode; b. a pair of Schottky barrier diodes connected in mutual series-aiding electrical relationship, adapted for the application of a reverse voltage bias to both diodes of the pair; c. a common node between the diodes to which the gate electrode is also connected; and d. variable capacitor means for varying the electrical impedance across one of the diodes, in order to vary the electrical current through the transistor to an electrical load.
Claim 6
Dependent Claim
86 words
An electrical network which comprises: a. a switching transistor having an insulated gate electrode; b. a pair of Schottky barrier diodes connected in mutual series-aiding electrical relationship, adapted for the application of a reverse voltage bias to both diodes of the pair; c. a common node between the diodes to which the gate electrode is also connected; and d. variable capacitor means for varying the electrical impedance across one of the diodes, in order to vary the electrical current through the transistor to an electrical load.
Claim 7
Dependent Claim
15 words
The network recited in claim 4 in which the capacitor includes a metallized mylar diaphragm.
Claim 8
Dependent Claim
15 words
The network recited in claim 4 in which the capacitor includes a phosphor bronze diaphragm.
Claim 9
Dependent Claim
125 words
An electrical network which comprises: a. a switching transistor having an insulated gate electrode; b. a pair of Schottky barrier diodes connected in a mutual series-aiding electrical relationship, adapted for the application of a reverse voltage bias to both diodes of the pair, in which the Schottky barrier diodes are formed by a pair of metal or metal-like electrodes in surface barrier contact respectively with a pair of zones of mutually opposite conductivity type on a major surface of a semiconductor wafer; c. a common node between the diodes to which the gate electrode is also connected; and d. means for varying the electrical impedance across one of the diodes, in order to vary the electrical current passing through the transistor to an electrical load.
Claim 10
Dependent Claim
125 words
An electrical network which comprises: a. a switching transistor having an insulated gate electrode; b. a pair of Schottky barrier diodes connected in a mutual series-aiding electrical relationship, adapted for the application of a reverse voltage bias to both diodes of the pair, in which the Schottky barrier diodes are formed by a pair of metal or metal-like electrodes in surface barrier contact respectively with a pair of zones of mutually opposite conductivity type on a major surface of a semiconductor wafer; c. a common node between the diodes to which the gate electrode is also connected; and d. means for varying the electrical impedance across one of the diodes, in order to vary the electrical current passing through the transistor to an electrical load.
Claim 11
Dependent Claim
30 words
The electrical network recited in claim 7 in which the diodes are electrically connected together by an electrode which is disposed upon an insulating layer on the said major surface.
Claim 12
Dependent Claim
22 words
The electrical network recited in claim 7 in which the metal-like electrodes are essentially nickel silicide and the semiconductor is essentially silicon.
Claim 13
Dependent Claim
21 words
The electrical network recited in claim 7 in which the metal-like electrodes are essentially zirconium disilicide and the semiconductor is silicon.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-23 | 1975-11-22 | 1976-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-23 | 1979-11-22 | 1980-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-23 | 1983-11-22 | 1984-05-23 | $7700.00 | Window Closed / Lapsed |