US3660733A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Homogeneous semiconductor with interrelated antibarrier contacts
Assignee: Individual
•
Filing: 1969-10-29
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Granted: 1972-05-02
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Expires: 1989-10-29
Abstract
Abstract A semiconductor device comprising a homogeneous semiconductor crystal and two antibarrier contacts, the area of one of which is smaller than that of the other and the diameter is smaller than the distance between the contacts and is limited in absolute value lying within 1 to 100 microns. This device can perform various functions, such as an oscillator, or a currector or a switch.
Inventors
- 👤 Fernando Zhozevich Vilf
- 👤 Alexandr Pavlovich Lysenko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:29
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10N; H10N70/00; H10N70/20; H10N70/801; H10N70/821; H10N70/823; H10N70/826; H10N70/841; H10N70/881; H10N70/884; H10N80/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
55 words
A semiconductor device comprising a homogeneous semiconductor crystal, two antibarrier contacts, the area of one of which is smaller than that of the other and the diameter is smaller than the distance between the contacts, the diameter of the contact of the smaller area being limited in absolute value lying within 1 to 100 microns.
Claim 2
Dependent Claim
55 words
A semiconductor device comprising a homogeneous semiconductor crystal, two antibarrier contacts, the area of one of which is smaller than that of the other and the diameter is smaller than the distance between the contacts, the diameter of the contact of the smaller area being limited in absolute value lying within 1 to 100 microns.
Claim 3
Dependent Claim
21 words
A semiconductor device as claimed in claim 1, wherein said antibarrier contacts are provided on the opposite facets of said crystal.
Claim 4
Dependent Claim
22 words
A semiconductor device as claimed in claim 1, wherein said antibarrier contacts are both provided on the same facet of said crystal.
Claim 5
Dependent Claim
29 words
A semiconductor device as claimed in claim 1, wherein said antibarrier contacts are located coaxially with respect to said semiconductor crystal which is a film grown on a dielectric.
Claim 6
Dependent Claim
48 words
A semiconductor device as claimed in claim 1, wherein one of the facets of said crystal is provided with an epitaxial semiconductor film having a larger resistivity than said crystal and the same type of conductivity, said antibarrier contacts being provided on the surface of said epitaxial film.
Claim 7
Dependent Claim
65 words
A semiconductor device as claimed in claim 1, wherein one of the facets of said crystal is provided with an epitaxial semiconductor film having a larger resistivity than said crystal and the same type of conductivity, the smaller one of said antibarrier contacts being provided on the surface of said epitaxial film while the bigger contact is provided on the opposite facet of said crystal.
References Cited (Backward Citations)
GB849476A
Cited
US3484662A
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US3443169A
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US3465265A
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US3435306A
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US3377566A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-02 | 1975-11-01 | 1976-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-02 | 1979-11-01 | 1980-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-02 | 1983-11-01 | 1984-05-02 | $7700.00 | Window Closed / Lapsed |