US3660732A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor structure with dielectric and air isolation and method
Assignee: Signetics Corp
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Filing: 1971-02-08
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Granted: 1972-05-02
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Expires: 1991-02-08
Abstract
Abstract Semiconductor structure having devices formed in a very thin layer of monocrystalline silicon with the devices being dielectrically and air isolated from each other.
Inventors
- 👤 David Frank Allison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:27
CPC Classifications
H; H10; H10D; H10D99/00; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/021; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/053; Y10S148/085; Y10S148/096; Y10S148/122
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
168 words
In a semiconductor structure, a support body, a layer of insulating material formed on the support body and having a relatively planar surface, a body of semiconductor material formed on the layer of insulating material and having a relatively precisely controlled predetermined depth ranging from approximately 2 to 5 1/2 microns with a surface generally parallel to the surface of the layer of insulating material, and at least a pair of semiconductor devices formed in the body of semiconductor material by diffused regions forming junctions extending to said surface of said semiconductor body, said body of semiconductor material having grooves formed therein to expose the layer of insulating material to the air so that the devices are isolated from each other by the air in the grooves and by the layer of insulating material, said grooves opening through said surface of said semiconductor body and having a width at said surface of said semiconductor body which is at least as great as the width at the insulating layer.
Claim 2
Dependent Claim
168 words
In a semiconductor structure, a support body, a layer of insulating material formed on the support body and having a relatively planar surface, a body of semiconductor material formed on the layer of insulating material and having a relatively precisely controlled predetermined depth ranging from approximately 2 to 5 1/2 microns with a surface generally parallel to the surface of the layer of insulating material, and at least a pair of semiconductor devices formed in the body of semiconductor material by diffused regions forming junctions extending to said surface of said semiconductor body, said body of semiconductor material having grooves formed therein to expose the layer of insulating material to the air so that the devices are isolated from each other by the air in the grooves and by the layer of insulating material, said grooves opening through said surface of said semiconductor body and having a width at said surface of said semiconductor body which is at least as great as the width at the insulating layer.
Claim 3
Dependent Claim
19 words
A semiconductor structure as in claim 1 together with metallization carried by the semiconductor body for interconnecting said devices.
Claim 4
Dependent Claim
26 words
A semiconductor structure as in claim 1 wherein all of said diffused regions extend completely through said semiconductor body down to said layer of insulating material.
Claim 5
Dependent Claim
40 words
A semiconductor structure as in claim 1 wherein said devices are formed by each having spaced diffused source and drain regions extending downwardly through the semiconductor body to the layer of insulating material with a gate disposed between the same.
Claim 6
Dependent Claim
16 words
A semiconductor as in claim 1 wherein at least one of said devices is a diode.
Claim 7
Dependent Claim
18 words
A semiconductor structure as in claim 1 wherein at least one of said devices is a lateral transistor.
Claim 8
Dependent Claim
18 words
A semiconductor structure as in claim 1 wherein at least one of said devices is a bipolar transistor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-02 | 1975-11-01 | 1976-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-02 | 1979-11-01 | 1980-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-02 | 1983-11-01 | 1984-05-02 | $7700.00 | Window Closed / Lapsed |