Optoelectronic display panel

Claim 2

A solid state display device comprising: an image-receiving panel including a plurality of photoconductive elements disposed on one surface thereof in matrix form; a display panel arranged on the other side of said imagereceiving panel, and including a plurality of PN junction light emitters disposed in matrix form in corresponding positions to said photo-conductive elements; a plurality of tunnel diodes, each of which is connected in series with a respective one of said PN junction light emitters; means for connecting one terminal of each of the respective photo-conductive elements to the junction point of a respective tunnel diode and PN light emitter combination; and means for electrically connecting to the other terminal of the respective photo-conductive elements and the other terminal of said PN junction light emitters and tunnel diodes opposite to the ends forming the junction points thereof from outside said display device.

Claim 3

The solid state display device according to claim 1, wherein said photo-conductive elements, PN junction light emitters and tunnel diodes are formed on separate portions of a single semiconductor substrate.

Claim 4

A solid state display device comprising: a display panel including a plurality of light-emissive elements disposed on one surface thereof in matrix form; a plurality of negative resistance elements, each of which is connected in series with each of said light-emissive elements, respectively; an image-receiving panel arranged on the opposite side against said one surface of said image-receiving panel, and including a plurality of photo-electric conversion elements disposed in matrix form in corresponding positions to said light-emissive elements, said photo-electric conversion elements being coupled respectively to said negative resistance elements for operatively switching said negative resistance elements; and a DC power source for supplying electric power to respective series circuits of said light-emissive elements and said negative resistance elements.

Claim 5

A solid state display device comprising: a display panel including a plurality of light-emissive elements disposed on one surface thereof in matrix form; a plurality of negative resistance elements, each of which is connected in series with each of said light-emissive elements, respectively; an image-receiving panel arranged on the opposite side against said one surface of said image-receiving panel, and including a plurality of photo-electric conversion elements disposed in matrix form in corresponding positions to said light-emissive elements, said photo-electric conversion elements being coupled respectively to said negative resistance elements for operatively switching said negative resistance elements; and a DC power source for supplying electric power to respective series circuits of said light-emissive elements and said negative resistance elements.

Claim 6

A solid state display device comprising: a semiconductor body having a first conductivity type; a plurality of light-emissive elements disposed On one surface of said semiconductor body in matrix form, to thereby form a display panel; a plurality of photo-electric conversion elements disposed on the other surface opposite to said one surface of said semiconductor body in matrix form to thereby form an image-receiving panel; a plurality of isolated semiconductive regions each having a second conductivity type opposite to said first conductivity type and formed in elongated fashion in said semiconductor body from said one surface to said opposite surface thereof, each of said isolated semiconductive regions electrically connecting each of said light-emissive elements to each of said photoelectric conversion elements, respectively; a plurality of negative resistance elements disposed on one surface of said semiconductor body; conductive leads formed on an insulator layer for covering said one surface of said semiconductor body, each of said leads connecting one of said light-emissive elements to one of said negative resistance elements, respectively; and a DC power source for supplying electric power to said respective series circuits of said light-emissive elements and said negative resistance elements.

Claim 7

A solid state display device comprising: a semiconductor body having a first conductivity type; a plurality of light-emissive elements disposed On one surface of said semiconductor body in matrix form, to thereby form a display panel; a plurality of photo-electric conversion elements disposed on the other surface opposite to said one surface of said semiconductor body in matrix form to thereby form an image-receiving panel; a plurality of isolated semiconductive regions each having a second conductivity type opposite to said first conductivity type and formed in elongated fashion in said semiconductor body from said one surface to said opposite surface thereof, each of said isolated semiconductive regions electrically connecting each of said light-emissive elements to each of said photoelectric conversion elements, respectively; a plurality of negative resistance elements disposed on one surface of said semiconductor body; conductive leads formed on an insulator layer for covering said one surface of said semiconductor body, each of said leads connecting one of said light-emissive elements to one of said negative resistance elements, respectively; and a DC power source for supplying electric power to said respective series circuits of said light-emissive elements and said negative resistance elements.

Claim 8

A solid state display device according to claim 4, wherein said respective light-emissive elements are comprised of a diode having a PN junction which is formed in said semiconductor body.

Claim 9

A solid state display device according to claim 5, wherein said respective photoelectric conversion element is formed of a photo-conductive material.

Claim 10

An optoelectronic display device including a matrix of semiconductor elements, each semiconductor element comprising: a semiconductor substrate of a first conductivity type having first and second opposite surfaces; a pair of diffused impurity regions of a conductivity type different from said first conductivity type diffused within and passing through said substrate to said first and second surfaces; a substantially U-shaped resistive layer of a second conductivity type different from said first conductivity type diffused within said substrate between said impurity regions on said first and second sides of said substrate; a first layer of said first conductivity type deposited in one end of said U-shaped resistive layer and being allowed therewith, so as to form a tunnel diode region, a photo-conductive region supported on said first side of said substrate and being connected therewith; and a first conductive path insulatingly supported on said first side of said substrate for connecting the other end of said U-shape resistive layer and one of said diffused impurity regions.

Claim 11

An optoelectronic display device including a matrix of semiconductor elements, each semiconductor element comprising: a semiconductor substrate of a first conductivity type having first and second opposite surfaces; a pair of diffused impurity regions of a conductivity type different from said first conductivity type diffused within and passing through said substrate to said first and second surfaces; a substantially U-shaped resistive layer of a second conductivity type different from said first conductivity type diffused within said substrate between said impurity regions on said first and second sides of said substrate; a first layer of said first conductivity type deposited in one end of said U-shaped resistive layer and being allowed therewith, so as to form a tunnel diode region, a photo-conductive region supported on said first side of said substrate and being connected therewith; and a first conductive path insulatingly supported on said first side of said substrate for connecting the other end of said U-shape resistive layer and one of said diffused impurity regions.

Claim 12

An optoelectronic device according to claim 7, further including a second conductive path insulatingly formed on said first side of said substrate and connecting the other of said diffused impurity regions with said tunnel diode.

Claim 13

An optoelectronic device according to claim 8, further including a third conductive path insulatingly formed on said first side of said substrate and connecting said substrate and said photo-conductive region.

Claim 14

An optoelectronic device according to claim 9, further including a second layer of said first conductivity type formed on said second side of said substrate over said other impurity region and a portion of the surface of said substrate; a dense layer of said first conductivity type formed in said second layer; and a fourth conductive path insulatingly supported on said second side of said substrate and connecting said dense layer with the side of said one impurity region opposite the connection of said first conductive path.

Claim 15

An optoelectronic display device according to claim 10, wherein each of said conductive paths is insulatingly supported by a layer of insulation formed on said substrate.

Claim 16

An optoelectronic display device according to claim 11, further including a fifth conductive path contacting said one end of said U-shaped resistive layer adjacent said tunnEl diode and extending beyond the surface of said insulation, so that an external connection can be applied thereto.

Claim 17

An optoelectronic display device according to claim 12, further including an aluminum shield disposed within said insulating layer on said first side of said substrate beneath said photo-conductive layer.

Claim 18

An optoelectronic display device according to claim 13, wherein said substrate is formed from a crystal selected from a group consisting of gallium-phosphide, gallium-arsenide, and a mixture of gallium-phosphide and gallium-arsenide.

Claim 19

An optoelectronic display device according to claim 14, wherein the impurity diffused in said impurity regions is selected from the group consisting of tellurium, selenium, and antimony.

Claim 20

An optoelectronic display device according to claim 15, wherein said second layer of said first conductivity type has zinc diffused therein to form said dense layer.

Claim 21

An optoelectronic display device according to claim 12, wherein ground potential is applied to said substrate, a positive potential is applied to said fifth conductive path and a negative potential is applied to said first conductive path.