US3658610A
Expired / Lapsed
US
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Manufacturing method of semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1967-03-20
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Granted: 1972-04-25
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Expires: 1987-03-20
Abstract
Abstract A method of pattern-etching a passivation layer on the surface of a semiconductor body by means of the photoresist technique, said passivation layer consisting of laminated two layers, of which the solving speed of the upper layer in an etchant is higher than that of the lower layer; in which the lower layer is formed first, followed by etching into the desired pattern, the upper layer is next formed over the whole surface, then a photoresist film is applied in the identical pattern to the lower one, and finally the area or areas of the upper layer exposed at an opening or openings are etched away, whereby the defect that the upper layer having higher solubility is exclusively sideetched at the periphery of the pattern can be avoided.
Inventors
- 👤 Shigeru Arita
- 👤 Ichizo Kamei
- 👤 Tomisaburo Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:55
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23F; C23F1/00; C23F1/02; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P76/00; H10P76/40; H10W; H10W74/00; H10W74/40; H10W74/47; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/051; Y10S148/106
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
97 words
The method of claim 1, wherein said body is a silicon single-crystalline wafer, said wafer being heated in an oxygen atmosphere so as to form a lower layer of clean silicon dioxide thereon, said pattern being then formed in said lower layer, the wafer then being heated in an oxygen atmosphere containing phosphorous oxides so as to form an upper layer of phosphorous containing silicon dioxide over said first layer and over said pattern, applying a photoresist solution over said upper layer excepting for the portion thereof covering said pattern; then etching away said upper layer portion.
Claim 2
Dependent Claim
58 words
The method of claim 2, wherein said wafer is heated in said dry oxygen atmosphere at a temperature and for a period of time so as to produce a lower layer of clean silicon dioxide which is substantially 0.3 micron, and said upper layer is formed to a thickness of substantially 0.05 micron thick over said first layer.
Claim 3
Independent Claim
169 words
A method for manufacturing a semiconductor device of the type comprising an N-type semiconductor body upon one surface of which are attached a plurality of superimposed layers of insulating oxide materials, an upper layer of which is more rapidly soluble in an etchant than is a next lower layer, and further comprising an etched out pattern extending through both said layers thereby exposing said semiconductor body surface in correspondence with the configuration of said pattern, said method comprising the steps of: a. forming a first layer on said semiconductor body by the pyrolysis of organo-oxysilane; b. providing a said pattern through the thickness of said first layer; c. forming a second layer over said pattern by the pyrolysis of boron doped organo-oxysilane; d. applying a photoresist film over said second layer excepting that portion thereof which covers said pattern; e. etching away that portion of said second layer covering said pattern with an etching solution containing hydrofluoric acid as its principal constituent; and f. finally removing said photoresist film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-04-25 | 1975-10-25 | 1976-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-04-25 | 1979-10-25 | 1980-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-04-25 | 1983-10-25 | 1984-04-25 | $7700.00 | Window Closed / Lapsed |