Method of precipitating layers of semiconducting or insulating material from a flowing reaction gas or from a flowing dopant gas upon heated semiconductor crystals
Abstract
Abstract Method of precipitating layers of semiconducting or insulating material from a flowing reaction gas, upon heated semiconductor crystals, or for doping such crystals from a flowing dopant gas, wherein totally constant or only gradually changing operational conditions are maintained. The method is characterized by the fact that all working phases are so carried out with constant operational conditions. During one-half of the time required therefor, the reaction gas is transported approximately tangentially from one side over the semiconductor crystals to be processed. During the other half of the required period the reaction gas is transported approximately tangentially from the opposite side over the semiconductor crystals to be processed.
Inventors
- 👤 Eduard Folkmann
- 👤 Erich Pammer
Bibliographic Details
Claims Analysis
Total Claims: 1References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 1979-04-25 | 1979-10-25 | 1980-04-25 | $3760.00 | Window Closed / Lapsed |
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