US3657609A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrical device controlled by at least two tunable capacitance diodes
Assignee: Siemens AG
•
Filing: 1969-10-15
•
Granted: 1972-04-18
•
Expires: 1989-10-15
Abstract
Abstract Electrical device controlled by at least two tunable capacitance diodes and means impressing a tunable voltage upon said diodes. The device is so characterized that the capacitance diodes which are combined, in a known manner, within a single semiconductor crystal, have as their common component, a surface region produced at one flat side of the semiconductor crystal, whose boundary to the semiconductor crystal is at least essentially parallel to the flat semiconductor surface. The other component of the capacitance diodes, simultaneously produced regions are embedded therein. The embedded regions of opposite conductance type are so arranged over the entire area of the surface region and provided for the individual tuning diodes. Each square amounting to a maximum of 20 percent of the total area of the surface region, contains at least a portion of the active PNjunctions of each of the provided tuning diodes.
Inventors
- 👤 Gernot Oswald
- 👤 Wolfgang Wenzig
- 👤 Hugo Ruchardt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:47
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D99/00; Y; Y10; Y10S; Y10S257/00; Y10S257/925
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
139 words
An electrical device controlled by at least tWo tunable capacitance diodes and means impressing a tunable biasing voltage upon said diodes, the capacitance diodes, combined within a single semiconductor crystal, have as their common component a surface region produced at one flat side of the semiconductor crystal, the boundary of the surface region to the semiconductor crystal is at least essentially parallel to the flat semiconductor surface, the other component of the capacitance diodes constituting a plurality of embedded regions of opposite conductance type within a surface region F and provided for the individual tuning diodes, said embedded zones being so densely distributed over the surface region F, that each square amounting to a maximum of 20 percent of said surface region F, contains at least a portion of the active PN-junctions of each of the provided capacitance diodes.
Claim 2
Dependent Claim
139 words
An electrical device controlled by at least tWo tunable capacitance diodes and means impressing a tunable biasing voltage upon said diodes, the capacitance diodes, combined within a single semiconductor crystal, have as their common component a surface region produced at one flat side of the semiconductor crystal, the boundary of the surface region to the semiconductor crystal is at least essentially parallel to the flat semiconductor surface, the other component of the capacitance diodes constituting a plurality of embedded regions of opposite conductance type within a surface region F and provided for the individual tuning diodes, said embedded zones being so densely distributed over the surface region F, that each square amounting to a maximum of 20 percent of said surface region F, contains at least a portion of the active PN-junctions of each of the provided capacitance diodes.
Claim 3
Dependent Claim
38 words
The device of claim 1, wherein the surface region covers an entire flat side of a wafer shaped, monocrystalline semiconductor body, particularly made of silicon wherein the embedded regions are produced through diffusion, according to the planar technique.
Claim 4
Dependent Claim
24 words
The device of claim 1 wherein the surface region is produced by means of epitaxy, upon a higher-doped substrate of the same conductance type.
Claim 5
Dependent Claim
18 words
The device of claim 1 wherein two embedded regions belong to at least one of the capacitance diodes.
Claim 6
Dependent Claim
16 words
The device of claim 4, wherein the embedded regions of the capacitance diodes are mutually toothed.
Claim 7
Dependent Claim
40 words
The device of claim 1 wherein an even number of embedded regions are provided, half of which are assigned to the two provided capacitance diodes and distributed over the surface of the surface region, in an alternating chessboard like pattern.
Claim 8
Dependent Claim
41 words
The device of claim 1 wherein the embedded regions provided for each of the capacitance diodes are of different size or shape, while the total rim length for all provided capacitance diodes is in equal proportion to the respective total area.
Claim 9
Dependent Claim
138 words
An electrical device controlled by at least two tunable capacitance diodes and means impressing a biasing blocking voltage upon said diodes, according to claim 7, wherein the capacitance diodes, combined within a single semiconductor crystal, have as a common component a surface region produced at one flat side of the semiconductor crystal, whose boundary with the semiconductor crystal extends, at least essentially, parallel to the flat semiconductor surface, while as the other component of the capacitance diodes, a number of regions of opposite conductance type, having a total area F, are embedded and are distributed over the total area F at such density and provided for the diodes, that each square totaling a maximum of 20 percent of the total area F contains at least a part of the active PN-junction of each of the provided tuning diodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-04-18 | 1975-10-18 | 1976-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-04-18 | 1979-10-18 | 1980-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-04-18 | 1983-10-18 | 1984-04-18 | $7700.00 | Window Closed / Lapsed |