US3650815A
Expired / Lapsed
US
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Chemical vapor deposition of dielectric thin films of rutile
Assignee: Westinghouse Electric Corp
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Filing: 1969-10-06
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Granted: 1972-03-21
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Expires: 1989-10-06
Abstract
Abstract Thin films of titanium dioxide in the rutile form are deposited by chemical vapor deposition technique on a heated surface of a substrate by reacting titanium tetrachloride with oxygen, in the range of temperatures from 700* to 900* C.
Inventors
- 👤 Rathindra N Ghoshtagore
- 👤 Robert F Yut
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:47
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; Y; Y10; Y10T; Y10T428/00; Y10T428/25; Y10T428/256; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
24 words
The process of claim 1 wherein the reactant gas mixture includes a carrier gas selected from the group consisting argon, neon, krypton, and helium.
Claim 2
Dependent Claim
35 words
The process of claim 1 wherein the partial pressure of oxygen in the reactant gas mixture is one atmosphere, and the partial pressure of titanium tetrachloride ranges from 0.028 mm. Hg to 0.9 mm. Hg.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein the partial pressure of titanium tetrachloride is from 0.058 mm. Hg to 0.232 mm. Hg.
Claim 4
Dependent Claim
24 words
The process of claim 1 wherein the surface of the substrate is heated to a temperature of from about 700* to about 900* C.
Claim 5
Dependent Claim
63 words
The process of claim 1 wherein the surface of the substrate is heated to a temperature of from 700* to 850* C., and the ratio of the partial pressure of titanium tetrachloride to the partial pressure of oxygen in the reactant gas mixture is less than 1.16 X 10 1, the partial pressure of titanium tetrachloride being from 0.028 to 0.90 mm. Hg.
Claim 6
Dependent Claim
25 words
The process of claim 6 wherein the thin film of titanium dioxide grown on the heated surface of the substrate is one grain in thickness.
Claim 7
Dependent Claim
42 words
The process of claim 1 wherein the surface of the substrate is heated to an elevated temperature no greater than 850* C., and the thin film of titanium dioxide grown on the heated surface of the substrate is one grain in thickness.
Claim 8
Dependent Claim
74 words
The process of claim 1 wherein the surface of the substrate is heated to a temperature of approximately 800* C., the thin film of titanium dioxide is grown to a thickness of at least 100 A., and the major preferred orientation of titanium dioxide crystallites parallel to the surface of the substrate is (301) and the major preferred orientation of the c-axes of the titanium dioxide crystal with respect to the substrate is 78.5*.
Claim 9
Dependent Claim
12 words
The process of claim 9 wherein the substrate is made of silicon.
Claim 10
Dependent Claim
26 words
The process of claim 1 wherein the substrate is made of a material selected from the group consisting of silicon, magnesium oxide, quartz, and aluminum oxide.
Claim 11
Dependent Claim
70 words
The process of claim 1 wherein the temperature of the substrate surface is 700* C.; the partial pressure of oxygen in the reactant gas mixture is one atmosphere; the partial pressure of titanium tetrachloride in the reactant gas mixture is at least 0.058 and does not the minimum average reactant gas mixture volume flow is the equivalent of 12.5 liters per minute for a 54 mm. I.D. quartz reactor tube.
Claim 12
Dependent Claim
41 words
The process of claim 1 wherein the partial pressure of titanium tetrachloride is 0.116 mm. Hg; and the minimum average reactant gas mixture volume flow is the equivalent of 6.5 liters per minute for a 54 mm. I.D. quartz reactor tube.
Claim 13
Dependent Claim
39 words
The process of claim 1 wherein the partial pressure of titanium tetrachloride is 0.232 mm. Hg; and the minimum average reactant gas mixture flow is the equivalent of 3.2 liters per minute for a 54 mm. I.D. quartz reactor.
Claim 14
Dependent Claim
74 words
The process of claim 1 wherein the temperature of the substrate surface is 800* C.; the partial pressure of titanium tetrachloride in the reactant gas mixture is at least 0.058 and does not exceed 0.90 mm. Hg, the partial pressure of oxygen in the reactant gas mixture being one atmosphere; and the minimum average reactant gas mixture volume flow is the equivalent of 51.0 liters per minute for a 54 mm. I.D. quartz reactor.
Claim 15
Dependent Claim
39 words
The process of claim 1 wherein the partial pressure of titanium tetrachloride is 0.116 mm. Hg; and the minimum average reactant gas mixture flow is the equivalent of 26.0 liters per minute for a 54 mm. I.D. quartz reactor.
Claim 16
Dependent Claim
39 words
The process of claim 1 wherein the partial pressure of titanium tetrachloride is 0.232 mm. Hg; and the minimum average reactant gas mixture flow is the equivalent of 13.0 liters per minute for a 54 mm. I.D. quartz reactor.
References Cited (Backward Citations)
US3373051A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-21 | 1975-09-20 | 1976-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-21 | 1979-09-20 | 1980-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-21 | 1983-09-20 | 1984-03-21 | $7700.00 | Window Closed / Lapsed |