Beam lead bonding process

Abstract

Abstract A METHOD OF FORMING A BEAM LEAD ON A WATER FO SEMICONDUCTOR MATERIAL CONTAINING A PLURALITY INTEGRATED CIRCUITS IN WHICH THE BEAM LEAD IS DEPOSITED ON A LAYER OF CONDUCTIVE MATERIAL WHEREBY IT BECOMES PHYSICALLY BONDED AND ELECTRICALLY CONNECTED TO THE CONDUCTOR PAD OF ONE OF SUCH INTEGRATED CIRCUITS AND OVERLAYS SAID WAFER OUTSIDE SAID ONE CIRCUIT. BONDING TI THE CONDUCTIVE MATERIAL OUTSIDE SAID ONE CIRCUIT IS INHIBITED BY CHEMICAL TREATMENT OF SUCH CONDUCTIVE MATERIAL. HENCE THE WAFER OF SEMICONDUCTOR MATERIAL MAY BE DIVIDED READILY INTO A PLURALITY OF CHIPS EACH HAVING BEAM LEADS ATTACHED THERETO AND EXTENDING THEREFROM IN CANTILEVER FASHION. ALSO DISCLOSED IS A METHOD OF SCRIBING THE BACKSIDE OF SAID WAFER REMOTE FROM SAID BEAM LEADS SUCH THAT THE WAFER MAY BE BROKEN INTO A PLURALITY OF CHIPS ALONG LINES SPANNED BY SAID BEAM LEADS. THIS IS ACCOMPLISHED BY DIRECTING INFRARED RADIATION THROUGH SAID WAFER TO ESTABLISH A PATTERN INDICATING, ON THE BACKSIDE OF THE WAFER, THE POSITION OF THE BEAM LEADS OR OTHER CIRCUIT COMPONENTS LOCATED ON THE FRONT SIDE OF THE WAFER.

Inventors

• 👤 Edward J Russell

Bibliographic Details