US3645812A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of purifying a quartz processing vessel for use in the production of semiconductors
Assignee: Siemens AG
•
Filing: 1968-09-10
•
Granted: 1972-02-29
•
Expires: 1988-09-10
Abstract
Abstract Described is a method of purifying a quartz processing vessel used in the production of semiconductors and more particularly for epitaxy from the gaseous phase. According to the invention, the entire inside surface of the processing vessel is provided with a highly pure silicon layer by precipitation from the gaseous phase. The silicon layer and its quartz base are thereafter tempered at a temperature of at least 1,000* C. The silicon layer is then selectively removed from its quartz base and the processing vessel is then ready for use as intended.
Inventors
- 👤 Erhard Sussmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:19
CPC Classifications
C; C23; C23F; C23F1/00; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/007; Y10S148/017; Y10S148/051; Y10S148/06
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
20 words
The method of claim 1, wherein the thickness of the precipitated silicon layer is from 10 to 100 Mu .
Claim 2
Dependent Claim
19 words
The method of claim 1, wherein the silicon layer and quartz vessel are tempered at least for 1 hour.
Claim 3
Dependent Claim
20 words
The method of claim 3, wherein the silicon layer and quartz vessel are tempered for from 3 to 10 hours.
Claim 4
Dependent Claim
24 words
The method of claim 1, wherein following the completion of the tempering step, the silicon layer is removed by etching in the gaseous phase.
Claim 5
Dependent Claim
29 words
The method of claim 1, wherein following the completion of the tempering step, the silicon layer is removed by etching with gaseous HCl at a temperature of 1,200* C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-02-28 | 1975-08-30 | 1976-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-02-28 | 1979-08-30 | 1980-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-02-28 | 1983-08-30 | 1984-02-29 | $7700.00 | Window Closed / Lapsed |