US3645787A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming multiple layer structures including magnetic domains
Assignee: Boeing North American Inc
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Filing: 1970-01-06
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Granted: 1972-02-29
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Expires: 1990-01-06
Abstract
Abstract A composite consisting of multiple layer structures, the basic structure of which is a chemically vapor deposited film on a substrate wafer, disclosed herein. The film is of such material appropriate for creating therein single wall magnetic domains which are capable of being moved about in predetermined directions within the thickness of the film and in the plane of the film. Devices are adapted to the film for sensing the motion of these domains thereby enabling application of these structures toward circuits which may be particularly utilized in memory or logic applications. A complete family of film on substrate materials are fabricated through a unique process, one of the steps of the process relates to establishment of the exact location of the substrate within the reactor at which deposition of the film upon the substrate is to be made in order to obtain the desired film characteristics. Included, are provisions for making multiple film layers to result in a matrix of films and hence a multitude of such circuits.
Inventors
- 👤 Jack E Mee
- 👤 David M Heinz
- 👤 Thomas N Hamilton
- 👤 Paul J Besser
- 👤 George R Pulliam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:56
CPC Classifications
H; H01; H01F; H01F41/00; H01F41/14; H01F41/20; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/20; H01F10/22; H01F10/26; H01F10/265
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
17 words
A method as described in claim 1 where said Q constituent of said film formulation is iron.
Claim 2
Dependent Claim
96 words
A method as described in claim 2 whereby said single crystal substrate has a JQ-oxide formulation wherein: the J constituent of said substrate formulation is at least one element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, lanthanum, yttrium, magnesium, calcium, strontium, barium, lead, cadmium, lithium, sodium and potassium; and the Q constituent of said substrate formulation is at least one element selected from the group consisting of indium, gallium, scandium, titanium, vanadium, chromium, manganese, rhodium, zirconium, hafnium, molybdenum, tungsten, niobium, tantalum, and aluminum.
Claim 3
Dependent Claim
107 words
A method as described in claim 2 whereby the film is formed by the steps of, conducting at least one of a plurality of metal halides into the reaction chamber, injecting at least one reacting gas and at least one carrier gas into the reaction chamber reaction therein with the metal halides thereby producing reaction products of the halides and gases, inserting a test sample for selecting the location of said substrate within said reaction chamber, removing said test sample, and inserting said substrate at the selected location for deposition of at least one of the reaction products on said substrate to form said monocrystalline film thereon.
Claim 4
Dependent Claim
72 words
A method as described in claim 3 whereby: said J constituent of said substrate formulation is at least one element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, lanthanum and yttrium; and said Q constituent of said substrate formulation is at least one element selected from the group consisting of indium, gallium, scandium, titanium, vanadium, chromium, manganese, rhodium, and aluminum.
Claim 5
Independent Claim
187 words
A method of forming a bubble domain comprising the steps of providing a single crystal substrate, and forming a first magnetic single crystal film on said substrate with sufficient mechanical strain in said film to provide said film with sufficient uniaxial anisotropy for the formation of bubble domains therein and having a thickness less than 25 microns, whereby said film has a JQO3 formulation wherein, the J constituent of said film formulation has at least one element selected from the group consisting of cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, hoLmium, erbium, thulium, ytterbium, lutetium, lanthanum and yttrium, and the Q constituent of said film formulation is taken from the group consisting of iron, gallium, indium, scandium, titanium, vanadium, chromium, and manganese, and forming a second magnetic single crystal film having a JQO3 formulation wherein said J and said Q constituents are taken from the same groups as set forth for said first single crystal film, and said second film having sufficient mechanical strain therein to provide sufficient uniaxial anisotropy for the formation of bubble domains therein and having a thickness less than 25 microns.
References Cited (Backward Citations)
US3097240A
Cited
US2919432A
Cited
US3332796A
Cited
US3511702A
Cited
US3429740A
Cited
US3460116A
Cited
US3421933A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-02-28 | 1975-08-30 | 1976-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-02-28 | 1979-08-30 | 1980-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-02-28 | 1983-08-30 | 1984-02-29 | $7700.00 | Window Closed / Lapsed |