US3645545A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Entrance-exit atmospheric isolation device
Assignee: International Business Machines Corp
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Filing: 1970-07-30
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Granted: 1972-02-29
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Expires: 1990-07-30
Abstract
Abstract An atmospheric isolation device for separation of two atmospheres of a continuous semiconductor processing apparatus which includes a gas entry tube, a plurality of first gas restricting means leading to a first atmosphere, a plurality of second gas restricting means leading to a second atmosphere, and adjacent to each gas restricting means an expansion chamber for increasing back pressure and for destroying lift produced by the Bernouilli effect of the gas passing through the restricting means.
Inventors
- 👤 Richard R Garnache
- 👤 Donald M Kenny
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:03
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0451; H10P72/0452; H10P72/0456; C; C30; C30B; C30B31/00; C30B31/06; C30B31/10; C30B31/106; Y; Y10; Y10S; Y10S277/00; Y10S277/906
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
117 words
Apparatus for providing isolation between a first atmosphere and a second atmosphere comprising: a gas inlet means; a plurality of first gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said first atmosphere; atmosphere; a plurality of second gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said second atmosphere; atmosphere; at least one gas expansion chamber located adjacent to each one of said first and second gas restricting means for interrupting the Bernouilli effect created by said gas restricting means and for further providing a reduction in enthalpy by allowing controlled expansion of gas to increase back pressure.
Claim 2
Dependent Claim
117 words
Apparatus for providing isolation between a first atmosphere and a second atmosphere comprising: a gas inlet means; a plurality of first gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said first atmosphere; atmosphere; a plurality of second gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said second atmosphere; atmosphere; at least one gas expansion chamber located adjacent to each one of said first and second gas restricting means for interrupting the Bernouilli effect created by said gas restricting means and for further providing a reduction in enthalpy by allowing controlled expansion of gas to increase back pressure.
Claim 3
Dependent Claim
15 words
Apparatus in accordance with claim 1 wherein said gas restricting means are of equal size.
Claim 4
Dependent Claim
26 words
Apparatus in accordance with claim 1 wherein said gas restricting means are substantially in the shape of an aperture formed by two substantially parallel spaced surfaces.
Claim 5
Dependent Claim
27 words
Apparatus in accordance with claim 3 wherein said gas restricting means are formed partially by projections having a substantially flat surface and partially by substantially flat workpieces.
Claim 6
Dependent Claim
19 words
Apparatus in accordance with claim 3 wherein the width of said projections and said expansion chambers are substantially equal.
Claim 7
Dependent Claim
174 words
Apparatus for providing isolation between ambient atmosphere and a continuous semiconductor processing apparatus atmosphere comprising: gas inlet means; a plurality of first gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said room-ambient atmosphere; a plurality of second gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said continuous semiconductor processing apparatus atmosphere, said first and second gas restricting means being defined partially by semiconductor substrate surfaces and a substrate carrier and partially by a carrier conforming member mounted in parallel spaced relation to the surface of the carrier, said restricting means further comprising an effective lift area less than necessary to lift substrates from their carriers; and at least one gas expansion chamber located adjacent to each of said restricting means for disrupting the Bernouilli effect produced by a flowing gas stream passing through said restricting means and for creating a reduction in enthalpy by means of controlled expansion of gas to increase back pressure.
Claim 8
Dependent Claim
174 words
Apparatus for providing isolation between ambient atmosphere and a continuous semiconductor processing apparatus atmosphere comprising: gas inlet means; a plurality of first gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said room-ambient atmosphere; a plurality of second gas restricting means for allowing a controlled quantity of gas to pass from said gas inlet means to said continuous semiconductor processing apparatus atmosphere, said first and second gas restricting means being defined partially by semiconductor substrate surfaces and a substrate carrier and partially by a carrier conforming member mounted in parallel spaced relation to the surface of the carrier, said restricting means further comprising an effective lift area less than necessary to lift substrates from their carriers; and at least one gas expansion chamber located adjacent to each of said restricting means for disrupting the Bernouilli effect produced by a flowing gas stream passing through said restricting means and for creating a reduction in enthalpy by means of controlled expansion of gas to increase back pressure.
Claim 9
Dependent Claim
16 words
Apparatus in accordance with claim 6 wherein said carrier conforming member comprises a substantially flat surface.
Claim 10
Dependent Claim
18 words
Apparatus in accordance with claim 6 wherein said first and second gas restricting means are of equal size.
Claim 11
Dependent Claim
30 words
Apparatus in accordance with claim 6 wherein the total width of one gas restricting means and one gas expansion chamber together equals less than the width of one semiconductor substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-02-28 | 1975-08-30 | 1976-02-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-02-28 | 1979-08-30 | 1980-02-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-02-28 | 1983-08-30 | 1984-02-29 | $7700.00 | Window Closed / Lapsed |