Digital mos fet characteristic tester

Claim 1

Apparatus for measuring parameters of semiconductor fieldeffect devices comprising: a. ramp voltage generator means for generating a variable device test voltage for dynamic testing, b. constant current means, c. bias voltage means, d. current sense means, e. threshold voltage detector means cooperatively functioning with said ramp voltage generator means for sensing a completed test and controlling said ramp generator means, f. timing means, g. monitoring means, h. control means for selectively interconnecting the functional means (a) through (g) and a device under test for measuring specific device parameters including drain to source resistance, threshold voltage, drain-source breakdown voltage, field inversion voltage, drain and source leakage, drain to substrate leakage current, and drain-substrate forward voltage drop; said control means including a plurality of switch means and a diode matrix for selectively closing said switch means, i. sequencer means cooperatively functioning with said control means for determining the specific device parameter to be measured, j. test initiation means for said functional means, and k. test completion means for deenergizing said functional means upon completion of a parameter measurement.