Epitaxial deposition method
Abstract
Abstract A method for the epitaxial deposition of epitaxial coatings on a semiconductor member. The method comprises the supporting of semiconductor members on a bridge-type element and introducing the bridge element into a reactor housing having three chambers. The bridge is placed in a first chamber where a purging gas is introduced for purposes of purging the semiconductor member. The bridge is then placed in a second chamber which is isolated from the first chamber and a purging gas is introduced into the second chamber for further purging the semiconductor member. Finally, the bridge is passed into a third chamber which is isolated from the first and second chambers. Feed gases are introduced into the third chamber for causing an epitaxial coating material to be deposited on the semiconductor member. The bridge is then removed from the third chamber and through the first and second chambers to the atmosphere external to each of said chambers.
Inventors
- 👤 Darrell M Harris
Bibliographic Details
Claims Analysis
Total Claims: 2References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-17 | 1975-07-19 | 1976-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-17 | 1979-07-19 | 1980-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-17 | 1983-07-19 | 1984-01-18 | $7700.00 | Window Closed / Lapsed |