US3634780A
Expired / Lapsed
US
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Magnetically frequency-tunable semiconductor transit time oscillator
Assignee: Telefunken Patentverwertungs GmbH
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Filing: 1969-12-23
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Granted: 1972-01-11
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Expires: 1989-12-23
Abstract
Abstract The frequency tunability of a semiconductor oscillator of the type wherein the frequency is dependent on the transit time of charge carriers in an electric field is improved by exposing the semiconductor device to a magnetic field which extends perpendicular to the normal direction of movement of the charge carriers by providing the semiconductor body with strip-shaped metal conductive paths which extend perpendicular to both the transverse component of the magnetic field and the electric field in order to short circuit any resulting Hall voltages. The frequency of the oscillation is varied by varying the magnitude of the transverse magnetic field.
Inventors
- 👤 Berthold Bosch
- 👤 Horst Pollmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:55
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H10; H10D; H10D99/00; H10N; H10N70/00; H10N70/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
306 words
A frequency-tunable semiconductor oscillator comprising: a. a monocyrstalline body of multivalley semiconductor material having the property of nucleating a high electric field region when a critical electrical bias field is exceeded and in which the high-field region will propagate through the semiconductor body under the influence of the bias field, said semiconductor body having at least one semiconductor layer which is sufficiently highly doped to allow the buildup of the highfield region: b. a pair of spaced ohmic contacts formed on one surface of said semiconductor layer; c. a source of DC voltage connected to said contacts for producing an electric field therebetween of sufficient intensity to exceed said critical field strength to nucleate and propagate said high electric field region along at least the portion of said semiconductor layer between said ohmic contacts thus causing the current through the semiconductor layer to oscillate at a frequency which is a function of the transit time of the high-field region consisting of charge carriers through said semiconductor layer; d. meaNs for applying a magnetic field to said semiconductor body, said magnetic field having a component thereof perpendicular to the direction of drift of the charge carriers caused by said electric field; and e. means for short circuiting the Hall voltage formed by the crossed electric and magnetic fields, said short circuiting means including a plurality of strip-shaped metal conductors contacting said semiconductor layer, said metal conductors being disposed parallel to one another and perpendicular to the said perpendicular component of the magnetic field and to the electric field, the distance in the direction of propagation of the charge carriers, between corresponding points of two of said strip-shaped metal conductors which are adjacent is at most equal to the length of said conductors, and wherein the width of said conductors is selected to be as small as possible.
Claim 2
Dependent Claim
306 words
A frequency-tunable semiconductor oscillator comprising: a. a monocyrstalline body of multivalley semiconductor material having the property of nucleating a high electric field region when a critical electrical bias field is exceeded and in which the high-field region will propagate through the semiconductor body under the influence of the bias field, said semiconductor body having at least one semiconductor layer which is sufficiently highly doped to allow the buildup of the highfield region: b. a pair of spaced ohmic contacts formed on one surface of said semiconductor layer; c. a source of DC voltage connected to said contacts for producing an electric field therebetween of sufficient intensity to exceed said critical field strength to nucleate and propagate said high electric field region along at least the portion of said semiconductor layer between said ohmic contacts thus causing the current through the semiconductor layer to oscillate at a frequency which is a function of the transit time of the high-field region consisting of charge carriers through said semiconductor layer; d. meaNs for applying a magnetic field to said semiconductor body, said magnetic field having a component thereof perpendicular to the direction of drift of the charge carriers caused by said electric field; and e. means for short circuiting the Hall voltage formed by the crossed electric and magnetic fields, said short circuiting means including a plurality of strip-shaped metal conductors contacting said semiconductor layer, said metal conductors being disposed parallel to one another and perpendicular to the said perpendicular component of the magnetic field and to the electric field, the distance in the direction of propagation of the charge carriers, between corresponding points of two of said strip-shaped metal conductors which are adjacent is at most equal to the length of said conductors, and wherein the width of said conductors is selected to be as small as possible.
Claim 3
Dependent Claim
21 words
The tunable oscillator defined in claim 1 wherein said strip-shaped metal conductors extend parallel to the said pair of ohmic contacts.
Claim 4
Dependent Claim
15 words
The tunable oscillator defined in claim 2, wherein said strip-shaped metal conductors contain a discontinuity.
Claim 5
Dependent Claim
17 words
The tunable oscillator defined in claim 1 wherein said semiconductor layer comprises an epitaxially formed planar layer.
Claim 6
Dependent Claim
22 words
The tunable oscillator defined in claim 4 wherein said striplike metal conductors are disposed on said one surface of said semiconductor layer.
Claim 7
Dependent Claim
25 words
The tunable oscillator defined in claim 5 wherein said striplike metal conductors are sufficiently long to extend across the entire width of said semiconductor layer.
Claim 8
Dependent Claim
22 words
A tunable frequency oscillator as defined in claim 1 wherein the magnitude of said perpendicular component of the magnetic field is variable.
Claim 9
Dependent Claim
32 words
The tunable frequency oscillator as defined in claim 1 including means for subjecting said semiconductor body to a low-temperature environment, whereby the transit time of said charge carriers can be further increased.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-10 | 1975-07-12 | 1976-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-10 | 1979-07-12 | 1980-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-10 | 1983-07-12 | 1984-01-11 | $7700.00 | Window Closed / Lapsed |