US3634737A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1970-02-02
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Granted: 1972-01-11
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Expires: 1990-02-02
Abstract
Abstract A semiconductor device comprises a substrate made of a semiconductor of diamond-type structure or a compound semiconductor of zincblende-type structure, and an active area formed in the substrate in which electron current flows and to which an intense electric field is applied. aid active area has a specific crystal face which is in a (011) zone or a (100) zone. Said current flows in the prescribed direction decided by the crystal axis in accordance with said crystal face so as to increase the mobility in said area.
Inventors
- 👤 Hajime Maeda
- 👤 Yoshiyuki Takeishi
- 👤 Tai Sato
- 👤 Hisashi Hara
- 👤 Yoshihiko Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:43
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D62/405; H10D99/00
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
72 words
A semiconductor device according to claim 1 wherein said substrate includes source and drain regions spacedly formed in the top surface thereof, each of which has a conductivity opposite to that of the substrate, an insulating film formed on the surface of said substrate between said source and drain regions, a gate electrode formed on said insulating film, and said active area is a channel formed between the source and drain regions.
Claim 2
Dependent Claim
46 words
A semiconductor device according to claim 1 wherein said substrate includes at least one PN-junction of which major part is formed in parallel to the top surface thereof, and spaced source and drain regions formed in said substrate, said active area being defined between said regions.
Claim 3
Dependent Claim
28 words
A semiconductor device according to claim 1, in which the intensity of the high electric field formed within the active area is more than 1 X 103 v./cm.
Claim 4
Dependent Claim
96 words
A semiconductor device comprising a substrate of a semiconductor selected from the group consisting of a semiconductor of diamond-type structure and a compound semiconductor of zincblende-type structure, said substrate comprising an active area formed therein in which electron current flows and means for applying an intense electric field to said active area, said active area having a crystal face, and upon said crystal face being substantially in a (011) plane at an angle with a (011) axis ranging between 0* to 35*15'', the direction of flow of the electron current is perpendicular to a (011) axis.
Claim 5
Dependent Claim
99 words
A semiconductor device comprising a substrate of a semiconductor selected from the group consisting of a semiconductor of diamond-type structure and a compound semiconductor of zincblende-type structure, said substrate comprising an active area formed therein in which an electron current flows and means for applying an intense electric field to said area, said active area having a crystal face, and upon said crystal face being substantially in a (011) plane at an angle with a (011) axis ranging from 35*16'' to less than 90*, the direction of flow of the electron current is in parallel to a (011) axis.
Claim 6
Dependent Claim
100 words
A semiconductor device comprising a substrate of a semiconductor selected from the group consisting of a semiconductor of diamond-type structure and a compound semiconductor of zincblende-tpe structure, said substrate comprising an active area formed therein in which an electron current flows and means for applying an intense electric field to said active area, said active area having a crystal face, and upon said crystal face being substantially in a (100) plane at an angle with a (011) axis ranging between 0* to less than 45*, the direction of flow of the electron current is in parallel to a (100) axis.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-10 | 1975-07-12 | 1976-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-10 | 1979-07-12 | 1980-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-10 | 1983-07-12 | 1984-01-11 | $7700.00 | Window Closed / Lapsed |