Abstract A television-type display which utilizes a special scanning mode in combination with a picture tube including a channel-type electron multiplier and a continuous primary electron source for all the holes therethrough. The electron multiplier has channels or holes across which two sets of insulated conductive strips extend. One set is perpendicular to the other. One strip of each pair is supplied with a voltage to allow only one hole at a time in the electron multiplier to emit electrons. Scan is thereby effected. Intensity may be controlled by applying a suitable voltage between perforate conductive layers bonded to opposite sides of the electron multiplier or the strips themselves. A semiconductive coating may be used on the internal surfaces of the holes of the electron multiplier to provide for large current pulses while maintaining a high gain. A unique double layer conductive electrode arrangement is provided at one end of the channels of said multiplier.
A channel-type electron multiplier comprising: an insulator having two opposite surfaces; a main conductive layer bonded to each of said surfaces, said insulator having a plurality of holes therethrough, both of said layers having a plurality of holes in alignment with each other and in alignment with a plurality of said insulator holes; a semiconductive layer capable of producing secondary emission at a ratio to primary emission greater than unity, said semiconductive layer being bonded to the internal surfaces of a plurality of said aligned insulator holes; said semiconductor having a conductivity intermediate that of said conductive layers and that of said insulator; and means comprising a first auxiliary conductive layer on said insulator underlaYing said semiconductor layer, said first auxiliary conductive layer extending from one of said opposite surfaces and within said holes therein, an insulating layer over said first auxiliary layer, and a second auxiliary conductive layer extending over a portion of said insulating layer at said one of said opposite surfaces extending a short distance into said holes.
Claim 2
Dependent Claim
171 words
A channel-type electron multiplier comprising: an insulator having two opposite surfaces; a main conductive layer bonded to each of said surfaces, said insulator having a plurality of holes therethrough, both of said layers having a plurality of holes in alignment with each other and in alignment with a plurality of said insulator holes; a semiconductive layer capable of producing secondary emission at a ratio to primary emission greater than unity, said semiconductive layer being bonded to the internal surfaces of a plurality of said aligned insulator holes; said semiconductor having a conductivity intermediate that of said conductive layers and that of said insulator; and means comprising a first auxiliary conductive layer on said insulator underlaYing said semiconductor layer, said first auxiliary conductive layer extending from one of said opposite surfaces and within said holes therein, an insulating layer over said first auxiliary layer, and a second auxiliary conductive layer extending over a portion of said insulating layer at said one of said opposite surfaces extending a short distance into said holes.
Claim 3
Dependent Claim
22 words
Apparatus as defined in claim 1 in which said semiconductive layer is defined as substantially continuous within the channels in said insulator.
Claim 4
Dependent Claim
61 words
Apparatus according to claim 2 in which said semiconductive layer is electrically joined to said main conductive layer adjacent at least a portion of said holes along one of said opposite surfaces and said second auxiliary conductive layer is electrically joined to said semiconductive layer adjacent to at least a portion of said holes along the other of said opposite faces.
Claim 5
Dependent Claim
52 words
Apparatus according to claim 3 in which said first auxiliary conductive layer extends a greater distance into each corresponding hole than does said second auxiliary conductive layer, and said insulating layer extends a sufficient distance into each of said holes to electrically insulate said semiconductive layer from said first auxiliary conductive layer.