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US3633994A Expired / Lapsed US ⏱️ 0.0 years remaining

Laser beam scanner

Assignee: International Business Machines Corp
•
Filing: 1969-03-03
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Granted: 1972-01-11
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Expires: 1989-03-03
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Abstract

Abstract A laser beam scanner characterized by the use of directionally controlled acoustic gain in a semiconductor to control the deflection angle of an incident laser beam. As an addition to devices in which stimulated Brillouin scattering occurs, a source of gain is employed to control the direction of the Brillouin scattered laser beam. By varying the direction of maximum acoustic gain at the frequency that corresponds to the Bragg angle, the direction of the acoustic wave can be changed. The direction of maximum acoustic gain is controlled by controlling the direction of a DC electric field applied to the semiconductor or by controlling the magnitude of that electric field.

Inventors

  • 👤 Duane G Carlson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 04:44
CPC Classifications
H; H01; H01S; H01S3/00; H01S3/30; G; G02; G02F; G02F1/00; G02F1/29

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 66 words
A scanning device comprising a piezoelectric semiconductor, means for creating an electric field within said semiconductor along a given direction in said semiconductor, means for causing stimulated Brillouin scattering in said semiconductor at a given angle to said given direction, and means for continuously varying either the magnitude or direction of said electric field so as to effect a continuous change in angle of said scattering.
Claim 2
Dependent Claim 66 words
A scanning device comprising a piezoelectric semiconductor, means for creating an electric field within said semiconductor along a given direction in said semiconductor, means for causing stimulated Brillouin scattering in said semiconductor at a given angle to said given direction, and means for continuously varying either the magnitude or direction of said electric field so as to effect a continuous change in angle of said scattering.
Claim 3
Dependent Claim 11 words
The scanning device of claim 1 wherein said semiconductor is CdS.
Claim 4
Dependent Claim 11 words
The scanning device of claim 1 wherein said semiconductor is ZnS.
Claim 5
Dependent Claim 11 words
The scanning device of claim 1 wherein said semiconductor is ZnO.
Claim 6
Dependent Claim 92 words
A scanning device comprising a piezoelectric semiconductor, means for creating an electric field within said semiconductor along a given direction in said semiconductor, means for applying a monochromatic coherent beam to said semiconductor of sufficient energy to generate an acoustic wave along the direction of said electric field whereby a portion of said beam is reflected at a predetermined angle from said generated acoustic wave, and means for continuously changing the direction of said electric field within the semiconductor so as to effect a continuous change in direction of said reflected beam.
Claim 7
Dependent Claim 92 words
A scanning device comprising a piezoelectric semiconductor, means for creating an electric field within said semiconductor along a given direction in said semiconductor, means for applying a monochromatic coherent beam to said semiconductor of sufficient energy to generate an acoustic wave along the direction of said electric field whereby a portion of said beam is reflected at a predetermined angle from said generated acoustic wave, and means for continuously changing the direction of said electric field within the semiconductor so as to effect a continuous change in direction of said reflected beam.
Claim 8
Dependent Claim 89 words
A scanning device comprising a piezoelectric semiconductor, means for creating an electric field along a given direction in said semiconductor, means for applying a monochromatic coherent beam to said semiconductor of sufficient energy to generate an acoustic wave along the direction of said electric field whereby a portion of said beam is reflected at a predetermined angle from said generated acoustic wave, and means for continuously increasing the magnitude of said electric field within the semiconductor so as to effect a continuous change in direction of said reflected beam.
Claim 9
Dependent Claim 89 words
A scanning device comprising a piezoelectric semiconductor, means for creating an electric field along a given direction in said semiconductor, means for applying a monochromatic coherent beam to said semiconductor of sufficient energy to generate an acoustic wave along the direction of said electric field whereby a portion of said beam is reflected at a predetermined angle from said generated acoustic wave, and means for continuously increasing the magnitude of said electric field within the semiconductor so as to effect a continuous change in direction of said reflected beam.
Claim 10
Dependent Claim 14 words
The scanning device of claim 6 wherein said beam is derived from a laser.

References Cited (Backward Citations)

US3384433A Cited
US3346816A Cited
US3439975A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-01-10 1975-07-12 1976-01-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-01-10 1979-07-12 1980-01-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-01-10 1983-07-12 1984-01-11 $7700.00 Window Closed / Lapsed

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