US3633078A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stable n-channel tetrode
Assignee: Raytheon Co
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Filing: 1969-10-24
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Granted: 1972-01-04
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Expires: 1989-10-24
Abstract
Abstract A field-effect transistor having two overlapping insulated gates, the first gate being of silicon and extending only partially over the channel region between the source and drain with the second gate being superimposed over the first gate so as to cover the channel region at least where not covered by the first gate and being insulated from the first gate by silicon oxide formed from the first gate.
Inventors
- 👤 Hans G Dill
- 👤 Darrell M Erb
- 👤 Thomas N Toombs
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:05
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/611
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
165 words
A field-effect transistor device comprising: a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a first gate electrode extending from said source region partially over and electrically insulated from said channel region toward said drain region but stopping short thereof; e. a second gate electrode extending at least over the portions of said channel region not covered by said first gate electrode, overlapping at least part of said first gate electrode and electrically insulated from said channel and said first gate electrode by a layer of electrically insulating material; f. the portion of said electrically insulating material between said channel and said second gate electrode being a lowelectron trap density layer formed from said silicon body and being contiguous with said second gate electrode and said silicon body.
Claim 2
Dependent Claim
165 words
A field-effect transistor device comprising: a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a first gate electrode extending from said source region partially over and electrically insulated from said channel region toward said drain region but stopping short thereof; e. a second gate electrode extending at least over the portions of said channel region not covered by said first gate electrode, overlapping at least part of said first gate electrode and electrically insulated from said channel and said first gate electrode by a layer of electrically insulating material; f. the portion of said electrically insulating material between said channel and said second gate electrode being a lowelectron trap density layer formed from said silicon body and being contiguous with said second gate electrode and said silicon body.
Claim 3
Dependent Claim
160 words
A field-effect transistor device comprising; a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a gate electrode of silicon extending from said source region partially over and electrically insulated from said channel region toward said drain region but stopping short thereof; e. a second gate electrode extending at least over the portions of said channel region not covered by said silicon gate electrode, overlapping at least part of said gate, and electrically insulated from said channel and said silicon gate electrode by a layer of silicon oxide; f. the portion of said layer of silicon oxide between said channel and said second gate electrode being a low-electron trap density layer formed from said silicon body and being contiguous with said second gate electrode.
Claim 4
Dependent Claim
160 words
A field-effect transistor device comprising; a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a gate electrode of silicon extending from said source region partially over and electrically insulated from said channel region toward said drain region but stopping short thereof; e. a second gate electrode extending at least over the portions of said channel region not covered by said silicon gate electrode, overlapping at least part of said gate, and electrically insulated from said channel and said silicon gate electrode by a layer of silicon oxide; f. the portion of said layer of silicon oxide between said channel and said second gate electrode being a low-electron trap density layer formed from said silicon body and being contiguous with said second gate electrode.
Claim 5
Dependent Claim
179 words
A field-effect transistor device comprising; a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a gate electrode of silicon extending from said source region partially over said channel region toward said drain region but stopping short thereof; e. a thin film of silicon oxide formed from said silicon body disposed between said silicon gate electrode and said channel region; f. a second gate electrode extending at least over the portions of said channel region not covered by said silicon gate electrode, overlapping at least part of said gate electrode, and electrically insulated from said channel and said silicon gate electrode by a layer of silicon oxide; g. the portion of said layer of silicon oxide between said chAnnel and said second gate electrode being a low-electron trap density layer formed from said silicon body and being contiguous with said second gate electrode.
Claim 6
Dependent Claim
179 words
A field-effect transistor device comprising; a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a gate electrode of silicon extending from said source region partially over said channel region toward said drain region but stopping short thereof; e. a thin film of silicon oxide formed from said silicon body disposed between said silicon gate electrode and said channel region; f. a second gate electrode extending at least over the portions of said channel region not covered by said silicon gate electrode, overlapping at least part of said gate electrode, and electrically insulated from said channel and said silicon gate electrode by a layer of silicon oxide; g. the portion of said layer of silicon oxide between said chAnnel and said second gate electrode being a low-electron trap density layer formed from said silicon body and being contiguous with said second gate electrode.
Claim 7
Dependent Claim
199 words
A field effect transistor device comprising; a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a gate electrode of silicon extending from said source region partially over said channel region toward said drain region but stopping short thereof; e. a thin film of silicon oxide formed from said silicon body disposed between said silicon gate electrode and said channel region; f. a thin film of silicon nitride disposed between said silicon gate and said thin film of silicon oxide; g. a second gate electrode extending at least over the portions of said channel region not covered by said silicon gate electrode, overlapping at least part of said gate electrode, and electrically insulated from said channel and said silicon gate electrode by a layer of silicon oxide; h. the portion of said layer of silicon oxide between said channel and said second gate electrode being a low-electron trap density layer formed from said silicon body and being contiguous with said second gate electrode.
Claim 8
Dependent Claim
199 words
A field effect transistor device comprising; a. a silicon body of a first conductivity type; b. spaced source and drain regions of opposite conductivity type disposed in said silicon body and at a common surface thereof; c. a channel region disposed in said silicon body between said source and drain regions; d. a gate electrode of silicon extending from said source region partially over said channel region toward said drain region but stopping short thereof; e. a thin film of silicon oxide formed from said silicon body disposed between said silicon gate electrode and said channel region; f. a thin film of silicon nitride disposed between said silicon gate and said thin film of silicon oxide; g. a second gate electrode extending at least over the portions of said channel region not covered by said silicon gate electrode, overlapping at least part of said gate electrode, and electrically insulated from said channel and said silicon gate electrode by a layer of silicon oxide; h. the portion of said layer of silicon oxide between said channel and said second gate electrode being a low-electron trap density layer formed from said silicon body and being contiguous with said second gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-01-03 | 1975-07-05 | 1976-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-01-03 | 1979-07-05 | 1980-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-01-03 | 1983-07-05 | 1984-01-04 | $7700.00 | Window Closed / Lapsed |