US3629623A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite semiconductor device and semiconductor voltage regulator device for vehicles
Assignee: Denso Corp
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Filing: 1969-08-28
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Granted: 1971-12-21
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Expires: 1989-08-28
Abstract
Abstract A composite semiconductor element formed in a thick film comprising a plurality of circuit units and functioning as a multi-input switching circuit or a multi-input logic circuit, each unit being mainly composed of two transistors connected in Darlington connection with a common collector region. This composite semiconductor element is especially useful for voltage regulators for vehicles.
Inventors
- 👤 Michio Sakurai
- 👤 Yoshichi Kawashima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:09
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H02; H02J; H02J7/00; H02J7/14; H02J7/16; H02J7/80; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/082; H03K19/084; H10D84/641; H10D84/642
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
187 words
A semiconductor integrated device comprising: an integrated semiconductor pellet including at least two parallel connected semiconductor circuit units having the same configuration and integrally formed in said semiconductor pellet, each unit comprising composite first and second integrated transistor stages connected in Darlington connection and having a common collector region formed of one conductivity type and provided with a leadout portion, each of said first and second transistor stages having respective base regions separately disposed on and of opposite conductivity type to said collector region and having respective emitter regions of said one conductivity type and respectively disposed on said base regions with the second stage one of said emitter regions being provided with respective leadout portions, the first stage one of said emitter regions bEing electrically connected to the second stage base region to effect said Darlington connection, and for at least one of said units another region having a respective leadout portion and being of said one conductivity type and disposed on and forming with said first stage base region of said one unit a PN-junction the backward characteristics of which serve as a Zener diode.
Claim 2
Dependent Claim
44 words
A device as in claim 2 in combination with an output transistor having a base connected to aid emitter region leadout portion for said other unit and a resistance connected between said collector region leadout portion and the base region for said other unit.
Claim 3
Dependent Claim
101 words
A device as in claim 2 in combination with: a voltage divider having two end terminals respectively connected to said collector leadout portion and to both of said emitter leadout portions and a central terminal connected to said leadout portion for said another region, the other of said units having a respective leadout portion from its first stage base region and a resistance coupled therefrom to said collector leadout portion, and an output transistor having a base connected to said emitter region leadout portion for said other unit and having an emitter collector circuit connected across said voltage divider end terminals.
Claim 4
Dependent Claim
308 words
A semiconductor voltage regulator device comprising: an integrated semiconductor pellet including at least two parallel connected semiconductor circuit units having the same configuration and integrally formed in said semiconductor pellet in rotational symmetry, each unit comprising composite first and second stage integrated transistors connected in Darlington connection and having a common collector region formed of one conductivity type and provided with a respective leadout portion, each of said first and second stage transistors having respective base regions separately disposed on and of opposite conductivity type to said collector region with the first stage one of the base regions being provided with a respective leadout portion, each of said first and second stage transistors further having respective emitter regions of said one conductivity type and being respectively disposed on said base regions with the second stage one of the emitter regions being provided with a respective leadout portion, the first stage one of said emitter regions being electrically connected to the second stage base region to effect said Darlington connection, for each unit another respective region having a respective leadout portion and being of said one conductivity type and disposed on the respective first stage base region forming therewith a respective PN-junction the backward characteristics of which serve as a Zener diode; a charging generator, an output transistor for switching the current from the generator, a voltage dividing network, one of said circuit units having its said leadout portion from the base of the first stage transistor free and said another region thereof being connected to the voltage dividing network, the other unit having the base of the first stage transistor connected to the common collector region and the emitter of the second stage transistor connected to the base of the output transistor, and a resistance connecting the common collector region to a positive pole of the charging generator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-20 | 1975-06-21 | 1975-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-20 | 1979-06-21 | 1979-12-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-20 | 1983-06-21 | 1983-12-21 | $7700.00 | Window Closed / Lapsed |