US3628187A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative resistance avalanche diodes with schottky barrier contacts
Assignee: AT&T Inc
•
Filing: 1969-12-10
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Granted: 1971-12-14
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Expires: 1989-12-10
Abstract
Abstract A negative resistance avalanche diode comprises only a bulk semiconductor wafer contained between opposite Schottky barrier contacts.
Inventors
- 👤 Bernard C De Loach Jr
- 👤 Roger Edwards
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:16
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H10; H10D; H10D8/00; H10D8/20; H10P; H10P95/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
20 words
The improvement of claim 1 wherein: the wafer consists of bulk semiconductor material of substantially constant conductivity with no PN-junctions.
Claim 2
Dependent Claim
23 words
The improvement of claim 2 wherein: the wafer is made of a material in which it is substantially impossible to form a PN-junction.
Claim 3
Dependent Claim
12 words
The improvement of claim 3 wherein: the wafer is made of diamond.
References Cited (Backward Citations)
US3519999A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-13 | 1975-06-14 | 1975-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-13 | 1979-06-14 | 1979-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-13 | 1983-06-14 | 1983-12-14 | $7700.00 | Window Closed / Lapsed |