Attenuator switches having deposited layer-type circuitry

Claim 2

An attenuator switch comprising: first and second wafers of electrically insulative material, said second wafer being movable relative to said first wafer, an attenuation circuit disposed on a face of said first wafer, said attenuation circuit comprising an impedance section having deposited-layer impedance components and conductors, contact means, attached to said first wafer, for making electrical connection to said conductors of said attenuation circuit, said contact means having contact ends spring biased against said second wafer, and conductive layer switch pads on said second wafer and cooperating with said contact ends of said contact means, for selectively inserting said attenuation circuit on said first wafer into an electrical circuit depending on the relative orientation of said first and second wafers.

Claim 3

An attenuator switch comprising: first and second wafers of electrically insulative material, said second wafer being movable relative to said first wafer, an attenuation circuit disposed on a face of said first wafer, said attenuation circuit comprising a resistor array having deposited-layer-type resistors and conductors, contact means, attached to said first wafer, for making electrical connection to conductors of said resistor array, said contact means having contact ends spring biased against said second wafer, and conductive film switch pads on said second wafer and cooperating with said contact ends of said contact means, for selectively inserting said resistor array in an electrical circuit depending on the relative orientation of said first and second wafers.

Claim 4

An attenuator switch comprising: first and second wafers of electrically insulative material, said second wafer being movable relative to said first wafer, an attenuation circuit disposed on a face of said first wafer, said attenuation circuit comprising a resistor array having deposited-layer-type resistors and conductors, contact means, attached to said first wafer, for making electrical connection to conductors of said resistor array, said contact means having contact ends spring biased against said second wafer, and conductive film switch pads on said second wafer and cooperating with said contact ends of said contact means, for selectively inserting said resistor array in an electrical circuit depending on the relative orientation of said first and second wafers.

Claim 5

An attenuator switch as defined in claim 2 wherein said electrically insulative material comprises a ceramic and wherein said deposited layer-type resistors are fabricated of cermet or conductive plastic.

Claim 6

An attenuator switch as defined in claim 2 wherein said resistor array comprises first, second, and third resistors connected as a pi section, and wherein said contact means comprises a first spring-metal contact electrically connected to the junction of said first and second resistors, and a second spring-metal contact electrically connected to the junction of said second and third resistors, said attenuator switch further comprising a common terminal electrically connected to the junction of said first and third resistors.

Claim 7

An attenuator switch as defined in claim 4 further comprising an input terminal and an output terminal, wherein said contact means further comprises a third spring-metal contact electrically connected to said input terminal and a fourth spring-metal contact electrically connected to said output terminal, and wherein said switch pads directly electrically connect said third contact to said fourth contact when said second wafer is in a first orientation, thereby bypassing said pi section, and wherein aid switch pads connect said first contact to said third contact and said second contact to said fourth contact when said second wafer is in a second orientation, thereby inserting said pi section into electrical circuit between said input and output terminals.

Claim 8

An attenuator switch as defined in claim 5 wherein said first wafer is stationary, wherein said second wafer is rotatable with respect to said first wafer, and wherein said wafers are disposed in spaced parallel relationship.

Claim 9

An attenuator switch as defined in claim 6 wherein the ends of said first through fourth contacts are disposed in spaced radial relationship with respect to the axis of rotation of said second wafer, and wherein said switch pads include a first radially extending pad dimensioned to interconnect said first and second contacts when said second wafer is in said first orientation and include a pair of interdigitated, generally C-shaped pads dimensioned to interconnect said first contact to said third contact and said second contact to said fourth contact when said second wafer is in said second orientation.

Claim 10

A device comprising: a plurality of attenuator switches each as defined in claim 7, the input and output terminals of said switches being connected in series to form said electrical circuit, and means for simultaneously rotating the second wafers of said switches, the second wafer of each switch including a plurality of switch pads disposed selectively to insert or bypass the pi section of the associated first wafer depending on the common rotational orientation of said second wafers.

Claim 11

A device as defined in claim 8 wherein each such switch includes a separate first and second wafer.

Claim 12

A device as defined in claim 9 and including aT least one second wafer having switch pads on both major faces thereof, an including a pair of first wafers respectively disposed to face opposite major faces of said at least one second wafer, said one second wafer thereby providing the switch pads for said pair of first wafers.

Claim 13

A step attenuator switch comprising: a plurality of stationary wafers interspersed in spaced parallel relationship with a plurality of rotary wafers, a shaft extending through an opening in the middle of each stationary wafer and cooperating to rotate simultaneously all of said rotary wafers, a deposited layer-type attenuator section disposed on each of said stationary wafers, each attenuator section comprising deposited layer-type resistors and conductors, a set of deposited layer-type conductive switch pads disposed on each rotary wafer, and spring-metal contacts extending from each stationary wafer and electrically connected to the attenuator section thereof, said contacts cooperating with switch pads on an associated rotary wafer to insert or bypass said section depending on the rotational position of said shaft.

Claim 14

A step attenuator switch comprising: a plurality of stationary wafers interspersed in spaced parallel relationship with a plurality of rotary wafers, a shaft extending through an opening in the middle of each stationary wafer and cooperating to rotate simultaneously all of said rotary wafers, a deposited layer-type attenuator section disposed on each of said stationary wafers, each attenuator section comprising deposited layer-type resistors and conductors, a set of deposited layer-type conductive switch pads disposed on each rotary wafer, and spring-metal contacts extending from each stationary wafer and electrically connected to the attenuator section thereof, said contacts cooperating with switch pads on an associated rotary wafer to insert or bypass said section depending on the rotational position of said shaft.

Claim 15

A step attenuator switch as defined in claim 11 wherein said deposited layer-type attenuator section is disposed on the front face of said stationary wafer and wherein ends of said contacts project rearwardly of said wafer through spaced holes therein.

Claim 16

A step attenuator switch as defined in claim 11 wherein said deposited layer-type attenuator section is disposed on the front face of said stationary wafer and wherein ends of said contacts project forwardly of said wafer.

Claim 17

A step attenuator switch as defined in claim 11 wherein each of said stationary wafers comprises: a substrate of refractory material, four spring-metal contacts extending in generally spaced parallel relationship, each contact being attached by a fastener spaced a selected distance from a free end of said each contact, said attenuator section comprising first, second, and third deposited layer-type resistors connected in pi configuration, a first deposited layer-type conductor connecting the junction of said first and second resistors to one of said contacts, a second deposited layer-type conductor connecting the junction of said second and third resistors to a second of said contacts, the junction of said first and third resistors being connected to a common terminal by a third deposited layer-type conductor, and a pair of input/output terminals electrically connected respectively to said third and said fourth contacts.

Claim 18

A bridged-T attenuator comprising: a wafer of electrically insulative material, portions of a bridged-T circuit disposed on both major faces of said wafer and formed of deposited layer-type components, and wiper contact means rotatable with respect to said wafer and cooperating with said deposited layer-type components for controlling the attenuation of said attenuator.

Claim 19

A bridged-T attenuator comprising: a wafer of electrically insulative material, portions of a bridged-T circuit disposed on both major faces of said wafer and formed of deposited layer-type components, and wiper contact means rotatable with respect to said wafer and cooperating with said deposited layer-type components for controlling the attenuation of said attenuator.

Claim 20

A bridged-T attenuator as defined in claim 15 wherein said wafer comprises a refractory material and has a central opening therethrough, said wiper contact means being attached to a shaft extending through said opening, said attenuator further comprising an input terminal, an output terminal and a common terminal all attached to said wafer, a pair of deposited layer-type fixed resistors being connected in series by means of deposited layer-type conductors between said input and output terminals.

Claim 21

A bridged-T attenuator as defined in claim 16 further comprising: a first annular deposited layer-type conductive switch pad disposed on one major face of said wafer surrounding said opening and electrically connected by means of a deposited layer-type conductive strip to said input terminal, a first plurality of deposited layer-type conductive switch pads disposed in a circle on said one major face surrounding said central opening, a pair of said first plurality of switch pads being electrically connected reSpectively to said input and output terminals, and a first plurality of deposited layer-type relative elements disposed on said one major face and electrically connected between adjacent ones of said first plurality of switch pads, said wiper contact means selectively electrically shorting one of said first plurality of switch pads to said first annular switch pad, thereby controlling the effective resistance of one portion of said bridged-T circuit.

Claim 22

A bridged-T attenuator as defined in claim 17 further comprising: a second annular deposited layer-type conductive switch pad disposed on the other major face of said wafer surrounding said opening and electrically connected by means of a deposited layer-type conductive strip to the junction of said pair of fixed resistors, a second plurality of deposited layer-type conductive switch pads disposed in a circle on said other major face surrounding said central opening a second plurality of deposited layer-type resistive elements disposed on said other major face, one of said second plurality of resistive elements being electrically connected between one of said second plurality of switch pads and said common terminal, others of said second plurality of resistive elements being electrically connected between adjacent ones of said second plurality of switch pads, said wiper contact means selectively electrically shorting one of said second plurality of switch pads to said second annular switch pad, thereby controlling the effective resistance of another portion of said bridged-T circuit.