US3626327A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tunable high-power low-noise stabilized diode oscillator
Assignee: Northrop Grumman Guidance and Electronics Co Inc
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Filing: 1970-06-22
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Granted: 1971-12-07
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Expires: 1990-06-22
Abstract
Abstract The invention disclosed is a tunable high-power low-noise stabilized frequency semiconductor diode oscillator unit which comprises a semiconductor diode, suitably a Gunn or Avalanche diode, located within a low-Q-resonant cavity for generating the carrier frequency, f0; and another cavity, tuned to f0 and having a very high-Q-relative to the first cavity, is tightly coupled to the low-Q-cavity. A microwave output passage in the low-Q-cavity is provided for connection of the oscillator output directly to a load; wherein the oscillator provides output powers in excess of 100 milliwatts at frequencies of 9.4 gigaHertz (GHz) with lownoise levels and a stabilization factor of approximately 200. A third cavity is coupled to the high-Q-cavity. The third cavity includes a voltage ''''tunable'''' diode, a varactor which varies in capacitance as a function of applied voltage. This provides a tuner which permits changing the frequency of resonance of the high Q cavity without substantially affecting its Q-value.
Inventors
- 👤 Thomas Hugo Luchsinger
- 👤 Walter Ransom Day Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:00
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/141
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
256 words
A tunable high-power low-noise stabilized diode oscillator for producing microwave frequency output power in excess of 100 milliwatts comprising: a. an oscillator section for providing electromagnetic energy of a frequency, f, at an output, said oscillator section including a1. semiconductor diode means having a negative resistance characteristic, a2. a low-Q microwave cavity having a resonant frequency, f, a3. said diode means being located within said low-Q microwave cavity, a4. means for applying bias voltages to said diode means, a5. first microwave passage means in said low-Q-cavity for providing an output for coupling to a load means, and a6. second microwave passage means in said low-Q-cavity, said diode means in combination with said low-Q-cavity for generating microwave frequency energy; b. a high-Q-microwave cavity resonant at a frequency substantially the same as that of the resonant frequency of said low-Q-cavity; said high-Q-microwave cavity containing a first microwave passage therein for permitting passage of microwave energy therethrough; c. coupling means coupling together said second microwave passage means and said microwave passage means of said high-Qcavity to couple together electromagnetically tightly said high-Q-cavity and said low-Q-cavity; and d. a third low-Q-microwave cavity, a varactor diode for varying the effective electrical capacitance of said cavity as a function of applied tuning voltage, said varactor diode being located in said third low-Q-cavity for changing the means capacitance thereof coupling said third low-Q-cavity to said high-Q-cavity for coupling electric fields therebetween and changing the frequency of resonance of said high-Q-cavity in dependence thereon, and means for applying tuning voltages to said varactor diode.
Claim 2
Dependent Claim
256 words
A tunable high-power low-noise stabilized diode oscillator for producing microwave frequency output power in excess of 100 milliwatts comprising: a. an oscillator section for providing electromagnetic energy of a frequency, f, at an output, said oscillator section including a1. semiconductor diode means having a negative resistance characteristic, a2. a low-Q microwave cavity having a resonant frequency, f, a3. said diode means being located within said low-Q microwave cavity, a4. means for applying bias voltages to said diode means, a5. first microwave passage means in said low-Q-cavity for providing an output for coupling to a load means, and a6. second microwave passage means in said low-Q-cavity, said diode means in combination with said low-Q-cavity for generating microwave frequency energy; b. a high-Q-microwave cavity resonant at a frequency substantially the same as that of the resonant frequency of said low-Q-cavity; said high-Q-microwave cavity containing a first microwave passage therein for permitting passage of microwave energy therethrough; c. coupling means coupling together said second microwave passage means and said microwave passage means of said high-Qcavity to couple together electromagnetically tightly said high-Q-cavity and said low-Q-cavity; and d. a third low-Q-microwave cavity, a varactor diode for varying the effective electrical capacitance of said cavity as a function of applied tuning voltage, said varactor diode being located in said third low-Q-cavity for changing the means capacitance thereof coupling said third low-Q-cavity to said high-Q-cavity for coupling electric fields therebetween and changing the frequency of resonance of said high-Q-cavity in dependence thereon, and means for applying tuning voltages to said varactor diode.
Claim 3
Dependent Claim
18 words
The invention as defined in claim 1 further comprising (d) load means coupled to said first passage means.
Claim 4
Dependent Claim
25 words
The invention as defined in claim 1 wherein said high-Q-cavity has a Q of approximately 47,000 and said low-Q-cavity has a Q of approximately 200.
Claim 5
Dependent Claim
52 words
The invention as defined in claim 1 wherein said coupling means comprises a microwave transmission line, and wherein the effective electrical distance between the axis of said diode means and the end of said second microwave passage means equals approximately N lambda /2, where N is an integer, 1, 2, - N.
Claim 6
Dependent Claim
26 words
The invention as defined in claim 1 wherein said high-Q-cavity has a Q-factor greater than 10,000 and said low-Q-cavity has a Q-factor between 200 and 1,000.
Claim 7
Dependent Claim
27 words
The invention as defined in claim 1 wherein the ratio of the Q-factor of said high-Q-cavity to the Q-factor of said low Q-cavity is greater than 10.
Claim 8
Dependent Claim
15 words
The invention as defined in claim 1 wherein said diode means comprises an Avalanche diode.
Claim 9
Dependent Claim
15 words
The invention as defined in claim 1 wherein said diode means comprises a Gunn diode.
Claim 10
Dependent Claim
222 words
A tunable high-power low-noise stabilized microwave diode oscillator for providing output powers in the 100-milliwatt level and above, with a low-noise factor and a stabilization factor S of around 200 comprising a first microwave cavity having a frequency of resonance, f, said cavity having a low-Q-factor; a microwave diode located in said first cavity, sAid microwave diode in combination with said first cavity for generating electromagnetic energy in the microwave frequency range within said first cavity; microwave load means; means coupling said load means to an output of said first microwave cavity; a second microwave cavity, said second microwave cavity being resonant at the same frequency of resonance as said first microwave cavity and having a relatively high-Q-factor; means coupling together electromagnetically tightly said first microwave cavity and said second microwave cavity; means for applying bias voltages to said microwave diode means; a third microwave cavity, said third cavity having a relatively low-Q-factor; a varactor diode situated within said third cavity for changing the effective electrical capacitance of said third cavity as a function of applied tuning voltage, means coupling electromagnetic fields between said third cavity and said second cavity for changing the frequency of resonance of said second cavity as a function of the change in capacitance of said third cavity; and means for applying tuning voltages to said varactor diode.
Claim 11
Dependent Claim
222 words
A tunable high-power low-noise stabilized microwave diode oscillator for providing output powers in the 100-milliwatt level and above, with a low-noise factor and a stabilization factor S of around 200 comprising a first microwave cavity having a frequency of resonance, f, said cavity having a low-Q-factor; a microwave diode located in said first cavity, sAid microwave diode in combination with said first cavity for generating electromagnetic energy in the microwave frequency range within said first cavity; microwave load means; means coupling said load means to an output of said first microwave cavity; a second microwave cavity, said second microwave cavity being resonant at the same frequency of resonance as said first microwave cavity and having a relatively high-Q-factor; means coupling together electromagnetically tightly said first microwave cavity and said second microwave cavity; means for applying bias voltages to said microwave diode means; a third microwave cavity, said third cavity having a relatively low-Q-factor; a varactor diode situated within said third cavity for changing the effective electrical capacitance of said third cavity as a function of applied tuning voltage, means coupling electromagnetic fields between said third cavity and said second cavity for changing the frequency of resonance of said second cavity as a function of the change in capacitance of said third cavity; and means for applying tuning voltages to said varactor diode.
References Cited (Backward Citations)
US3510800A
Cited
US3534293A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-12-06 | 1975-06-07 | 1975-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-12-06 | 1979-06-07 | 1979-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-12-06 | 1983-06-07 | 1983-12-07 | $7700.00 | Window Closed / Lapsed |