US3624557A
Expired / Lapsed
US
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Method for making diodes for use in trapatt oscillators
Assignee: AT&T Inc
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Filing: 1969-09-02
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Granted: 1971-11-30
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Expires: 1989-09-02
Abstract
Abstract A diode for use in a TRAPATT oscillator circuit is made in a known manner with care being taken to minimize internal defects. Recombination centers are then introduced into the diode for reducing the diode lifetime to a sufficient value to give a reverse saturation current Is appropriate for TRAPATT mode operation. The recombination centers may be introduced by high energy particle radiation, gold doping or quenching.
Inventors
- 👤 Bernard C De Loach Jr
- 👤 Donald L Scharfetter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 12:52
CPC Classifications
H; H10; H10D; H10D99/00; H03; H03B; H03B9/00; H03B9/12
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
163 words
A method for making a semiconductor oscillator for operation in the TRAPATT mode comprising the steps of: making a diode having first, second and third crystalline semiconductor layers, the first and second layers forming a PN junction and the third layer being of relatively high conductivity, the second layer being of sufficiently small width that, when a sufficient reverse-bias voltage is applied to the junction to cause avalanche breakdown, an electric field extends the entire distance from the PN junction to the third layer; the foregoing step being accomplished with sufficient care to substantially eliminate recombination centers in the crystalline lattice, thereby assuring a high carrier lifetime within the layer; controllably introducing a sufficient number of recombination centers to increase the reverse saturation current Is across the PN junction to an appropriate value for TRAPATT mode diode operation; and inserting the diode in a TRAPATT oscillator circuit resonant at an IMPATT frequency f and a TRAPATT frequency f/n, where n is an integer.
Claim 2
Independent Claim
163 words
A method for making a semiconductor oscillator for operation in the TRAPATT mode comprising the steps of: making a diode having first, second and third crystalline semiconductor layers, the first and second layers forming a PN junction and the third layer being of relatively high conductivity, the second layer being of sufficiently small width that, when a sufficient reverse-bias voltage is applied to the junction to cause avalanche breakdown, an electric field extends the entire distance from the PN junction to the third layer; the foregoing step being accomplished with sufficient care to substantially eliminate recombination centers in the crystalline lattice, thereby assuring a high carrier lifetime within the layer; controllably introducing a sufficient number of recombination centers to increase the reverse saturation current Is across the PN junction to an appropriate value for TRAPATT mode diode operation; and inserting the diode in a TRAPATT oscillator circuit resonant at an IMPATT frequency f and a TRAPATT frequency f/n, where n is an integer.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein: the recombination center introducing step comprises the step of subjecting the diode to high energy particle radiation.
Claim 4
Dependent Claim
42 words
The method of claim 2 wherein: the recombination center introducing step comprises the step of inserting the diode in a TRAPATT oscillator circuit, applying a bias across the diode, and irradiating the diode until it begins to oscillate in the TRAPATT mode.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein: the recombination center introducing step comprises the step of diffusing gold into the diode.
Claim 6
Dependent Claim
26 words
The method of claim 1 wherein: the recombination center introducing step increases the reverse saturation current Is to a value sufficient substantially to satisfy the relations:
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-29 | 1975-05-31 | 1975-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-29 | 1979-05-31 | 1979-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-29 | 1983-05-31 | 1983-11-30 | $7700.00 | Window Closed / Lapsed |