US3623923A
Expired / Lapsed
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Junction transistor using a thin layer of semiconductor material of a diffusion-proof substrate
Assignee: International Business Machines Corp
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Filing: 1968-09-03
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Granted: 1971-11-30
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Expires: 1988-09-03
Abstract
Abstract PLANAR TRANSISTOR HAVING REDUCED JUNCTION AREA FOR SMALL CAPACITANCE. A THIN LAYER OF SEMICONDUCTOR MATERIAL IS PLACED ON A SUBSTRATE MATERIAL WHICH IS NEARLY IMPENETRABLE BARRIER AGAINST DIFFUSION BY NORMALLY USED IMPURITY ATOMS. THE DEPTH OF THE JUNCTION IS LIMITED TO APPROXIMATELY THE THICKNESS OF THE THIN LAYER OF SEMICONDUCTOR MATERIAL, THUS LIMITING THE JUNCTION AREA AND CAPACTANCE.
Inventors
- 👤 David P Kennedy
- 👤 John A Perri
- 👤 Jacob Riseman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:01
CPC Classifications
H; H10; H10P; H10P32/00; A; A47; A47B; A47B61/00; A47B61/04; H10D; H10D99/00; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/035; Y10S148/085; Y10S148/106; Y10S148/15; Y10S148/167
Claims Analysis
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-29 | 1975-05-31 | 1975-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-29 | 1979-05-31 | 1979-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-29 | 1983-05-31 | 1983-11-30 | $7700.00 | Window Closed / Lapsed |