Method of manufacturing a field effect semiconductor device
Abstract
Abstract A METHOD OF MANUFACTURING AN MIS TYPE FET, WHEREIN, AFTER SOURCE AND DRAIN REGIONS ARE FORMED IN A SURFACE OF A SEMICONDUCTOR BODY, A PART OF AN INSULATING FILM WHICH HAS BEEN USED AS A SELECTIVE DIFFUSION MASK IS REMOVED TO EXPOSE A CARRIER PATH BETWEEN THE REGIONS AND A CONTINUOUS PART OF THE SOURCE REGION, WHILE THE OTHER PART OF THE INSULATING FILM COVERING THE SEMICONDUCTOR SURFACE, ESPECIALLY, THE SURFACE PORTION OF THE DRAIN REGION ADJACENT TO THE CARRIER PATH IS LEFT, THEN THE EXPOSED SURFACE OF THE BODY IS AGAIN COVERED WITH A FURTHER INSULATING FILM WHICH IS THINNER THAN THAT OF THE REMAINING INSULATING FILM, AND THEN A CONTROL ELECTRODE IS FORMED ON THE FURTHER INSULATING FILM.
Inventors
- 👤 Hiroto Kawagoe
- 👤 Masaharu Kubo
Bibliographic Details
Claims Analysis
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