US3622381A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for the preparation of a zinc oxide film
Assignee: Mitsubishi Electric Corp
•
Filing: 1969-09-22
•
Granted: 1971-11-23
•
Expires: 1989-09-22
Abstract
Abstract This invention relates to a method for the preparation of a zinc oxide by oxidizing a zinc selenide film. In detail, this invention relats to a method for the preparation of a zinc oxide film by vapordepositing zinc selenide as an evaporating source in place of zinc oxide to produce a zinc selenide film and then oxidizing said zinc selenide film.
Inventors
- 👤 Masaru Ohnishi
- 👤 Sumiaki Ibuki
- 👤 Michio Yoshizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:54
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; C23C14/0629; C01; C01G; C01G9/00; C01G9/02; C23C14/58; C23C14/5806; C23C14/5846; C23C14/5853
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
55 words
A method for the preparation of a zinc oxide film, by comprising the steps of growing (1) a zinc selenide film on a solid base plate and (2) impacting the zinc selenide film with ionized oxygen ions in the presence of an atmosphere containing oxygen under a reduced pressure to oxidize the zinc selenide film.
Claim 2
Independent Claim
75 words
A method for the preparation of a zinc oxide film containing an impure additive, comprising the steps of (1) growing a zinc selenide film on a baseplate, (2) adding the impure additive to the zinc selenide film and (3) oxidizing the zinc selenide film over the whole or part of the baseplate in the presence of an atmosphere containing oxygen in an amount sufficient to cause an oxidation reaction to produce the zinc oxide film.
Claim 3
Independent Claim
72 words
A method for the preparation of a zinc oxide film containing an impure additive, comprising the steps of (1) growing a zinc selenide film on a baseplate, (2) adding the impure additive to the zinc selenide film and simultaneously (3) oxidizing the zinc selenide film in the presence of an atmosphere containing the impure additive and oxygen in an amount sufficient to cause an oxidation reaction to produce the zinc oxide film.
Claim 4
Independent Claim
72 words
A method for the preparation of a zinc oxide film containing an impure additive, comprising the steps of (1) growing a zinc selenide film on a solid baseplate, (2) adding the impure additive to the zinc selenide film and (3) impacting the zinc selenide film or the zinc sulfide film with ionized oxygen ions in the presence of an atmosphere containing oxygen under a reduced pressure to oxidize the zinc selenide film.
Claim 5
Independent Claim
85 words
A method for the preparation of a zinc oxide film, comprising the steps of growing a zinc selenide film on a solid baseplate and (2) impacting the zinc selenide film with ionized oxygen ions in the presence of an atmosphere containing oxygen under a reduced pressure to oxidize surface parts of the zinc selenide film to form a junction between a zinc oxide fIlm and a zinc selenide film all over the surface or in part of the surface of the said zinc oxide film.
References Cited (Backward Citations)
US2810087A
Cited
DE1046223B
Cited
US2791521A
Cited
US3108904A
Cited
US3307983A
Cited
US3449148A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-22 | 1975-05-24 | 1975-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-22 | 1979-05-24 | 1979-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-22 | 1983-05-24 | 1983-11-23 | $7700.00 | Window Closed / Lapsed |