US3619801A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state transferred electron effect device
Assignee: Westinghouse Electric Corp
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Filing: 1967-08-23
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Granted: 1971-11-09
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Expires: 1987-08-23
Abstract
Abstract This invention is directed to a microwave solid-state device incorporating semiconductor devices of the type which exhibit the transferred electron effect. A plurality of these devices provided within a transmission line may provide greater amplification or a larger oscillator output for microwave applications over that of a single device.
Inventors
- 👤 Wayne E Hughes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:25
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/54; H03F3/55; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/143
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
127 words
A microwave energy device comprising a waveguide transmission line having an axis of wave propagation and conductors spaced transversely of said axis between which electric and magnetic wave fields are established, a plurality of differential negative resistance devices arranged in spaced relation along said axis of propagation, said devices comprising a sheet of semiconductor material and a plurality of pairs of ohmic contacts on said sheet, a pair of said ohmic contacts and the intervening portion of said sheet constituting one of said devices, means for applying a DC potential across said pairs of ohmic contacts to thereby produce electric currents through the intervening portions of said semiconductor sheet between the ohmic contacts of the respective pairs, to thereby amplify propagated microwave energy incident upon said devices.
Claim 2
Dependent Claim
127 words
A microwave energy device comprising a waveguide transmission line having an axis of wave propagation and conductors spaced transversely of said axis between which electric and magnetic wave fields are established, a plurality of differential negative resistance devices arranged in spaced relation along said axis of propagation, said devices comprising a sheet of semiconductor material and a plurality of pairs of ohmic contacts on said sheet, a pair of said ohmic contacts and the intervening portion of said sheet constituting one of said devices, means for applying a DC potential across said pairs of ohmic contacts to thereby produce electric currents through the intervening portions of said semiconductor sheet between the ohmic contacts of the respective pairs, to thereby amplify propagated microwave energy incident upon said devices.
Claim 3
Dependent Claim
27 words
A device as defined in claim 1 in which all of the ohmic contacts on said sheet of semiconductor material are on one surface of said sheet.
Claim 4
Dependent Claim
29 words
The device defined in claim 2 in which said waveguide transmission line is a rectangular waveguide and said semiconductor sheet is perpendicular to the broad sides of said waveguide.
Claim 5
Dependent Claim
41 words
The device defined in claim 3 in which electrically conductive means is provided on the same surface of said sheet as said ohmic contacts for providing electrical connection to said ohmic contacts and lead-ins extending through the walls of said waveguide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-08 | 1975-05-10 | 1975-11-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-08 | 1979-05-10 | 1979-11-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-08 | 1983-05-10 | 1983-11-09 | $7700.00 | Window Closed / Lapsed |