A semiconductor device having a connecting pad of low resistivity semiconductor material interconnecting gold electrodes and aluminum contacts of an enclosure

Claim 1

A semiconductor device in accordance with claim 1 wherein said supporting member has a generally flat upper surface and a recessed portion; said plurality of contact members each have a contact region of aluminum and a conductive lead portion, the plurality of contact regions being embedded in said flat upper surface and arranged in spaced apart relationship around said recessed portion of the supporting member, said lead portions extending away from the recessed portion of the supporting member; said substrate is a thin body of insulating material having flat opposed major surfaces; said substrate is mounted in the recessed portion of the supporting member with its lower major surface fixed to the supporting member; said layer of gold is on a portion of the upper major surface of the substrate; the first body of semiconductor material of the semiconductor element is a thin body having flat opposed major surfaces; the gold electrode is in contact with substantially the entire lower major surface of the first body of semiconductor material; the semiconductor element includes several aluminum electrodes on the upper major surface of the first body of semiconductor material, each being in contact with a different active region; the second body of semiconductor material of low resistivity is a thin body having flat opposed major surfaces; the layer of gold is on the lower major surface of the second body of semiconductor material; the layer of aluminum is on the upper major surface of the second body of semiconductor material; and including several connecting wires of aluminum, each being bonded to a different one of the aluminum electrodes of the semiconductor element and to a different one of said plurality of aluminum contact members.