US3612964A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mis-type variable capacitance semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1970-01-02
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Granted: 1971-10-12
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Expires: 1990-01-02
Abstract
Abstract A comb-shaped P-type region is provided on one main face of an N-type substrate to form therebetween a P-N junction terminating at that face. An insulating film is disposed on both the one face of the substrate and the P-region, except for a predetermined portion of the P-region, and a metallic layer is disposed on the film to extend over the P-N junction. A DC voltage across the substrate and P-region is controlled to change the capacitance between the substrate and film of the resulting MIS-type structure.
Inventors
- 👤 Satoru Kawazu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:08
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; H10D99/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
40 words
An MIS-type variable capacitance semiconductor device as claimed in claim 1, wherein said metallic layer extends over at least a portion of said plurality of the tooth portions of said second region and is spaced therefrom by said insulating film.
Claim 2
Dependent Claim
33 words
An MIS-type variable capacitance semiconductor device as claimed in claim 1 further comprising a voltage source connected across said electrodes on said first and second regions to control the capacitance of the device.
Claim 3
Dependent Claim
40 words
An MIS-type variable capacitance semiconductor device as claimed in claim 1, further comprising a voltage source connected across said electrodes on said first and second regions to control the capacitance of the device, and a capacitor connected across said source.
Claim 4
Dependent Claim
32 words
An MIS-type variable capacitance semiconductor device as claimed in claim 1 wherEin said metallic layer is divided into plural portions electrically isolated from one another and having respective metallic electrodes attached thereto.
Claim 5
Dependent Claim
75 words
An MIS-type variable capacitance semiconductor device as claimed in claim 1 wherein said metallic layer is divided into plural portions electrically isolated from one another and having respective metallic electrodes attached thereto, and further comprising electric control source means connected across said pair of electrodes on said first and second regions for effecting simultaneous changes in capacitances between a selected one of said first and second regions and said plural portions of said metallic layer.
Claim 6
Dependent Claim
53 words
An MIS-type variable capacitance semiconductor device as claimed in claim 1, wherein said metallic layer is divided into plural portions electrically isolated from one another and extending over different groups of teeth of said comb-shaped second region, and further comprising additional metallic electrodes attached to said plural portions respectively of said metallic layer.
Claim 7
Dependent Claim
178 words
An MIS-type variable capacitance semiconductor device comprising, in combination, a first region of semiconductive material having one type conductivity and including a pair of substantially flat opposed main faces, a comb-shaped second region of semiconductive material defining a plurality of tooth portions of opposite type conductivity disposed within said first region to form therebetween a P-N junction, said second portion having opposed first and second main faces, with said first main face terminating at one of said main faces of said first region, a film of electrical insulating material disposed on said one main face of said first region and on all but a predetermined portion of said first main face of said second region, thereby leaving said first main face of the second region exposed at said predetermined portion, a metallic layer disposed on said insulating film and extending over said P-N junction, first and second metallic electrodes attached to the exposed portion of said second region and the other main face of said first region, respectively, and a third metallic electrode attached to said metallic layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-11 | 1975-04-12 | 1975-10-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-11 | 1979-04-12 | 1979-10-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-11 | 1983-04-12 | 1983-10-12 | $7700.00 | Window Closed / Lapsed |